MBE制备长波(1.02-1.03 /spl mu/m) InGaAs/GaAs激光器

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889534

T. Piwoński, P. Sajewicz, J. M. Kubica, K. Reginski, B. Mroziewicz, M. Bugajski

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引用次数: 0

摘要

报道了用MBE技术制备波长为1.02 ~ 1.03 /spl μ m的InGaAs/GaAs SCH SQW激光器的工作原理。通过在有源区添加高铟含量，实现了较长的发射波长。本文介绍了在室温(T=300 K)脉冲作用下测量的预制结构的特性。结果是有希望的，并且为制造发射频率为1.06 /spl mu/m的结构提供了希望，这种结构在某些应用中可以取代二极管泵浦Nd:YAG激光器。

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Long wavelength (1.02-1.03 /spl mu/m) InGaAs/GaAs lasers fabricated by MBE

The operation of InGaAs/GaAs SCH SQW lasers emitting at the wavelength 1.02-1.03 /spl mu/m, fabricated by MBE technology, is reported. Longer wavelength of emission was achieved by applying high indium content in the active region. The paper presents characteristics of fabricated structures measured at room temperature (T=300 K) under pulsed operation. The results are promising and give hope for fabricating structures emitting at 1.06 /spl mu/m, which in some applications could replace diode pumped Nd:YAG lasers.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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