MIS结构Al-Dy/sub x/O/sub y/-n-InP的界面形成和电荷性质研究(100)

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889520

N. Babushkina, S. Malyshev, L.N. Bykova, L. Romanova

{"title":"MIS结构Al-Dy/sub x/O/sub y/-n-InP的界面形成和电荷性质研究(100)","authors":"N. Babushkina, S. Malyshev, L.N. Bykova, L. Romanova","doi":"10.1109/ASDAM.2000.889520","DOIUrl":null,"url":null,"abstract":"Al-Dy/sub x/O/sub y/-n-InP [100] structures with dysprosium oxide films Dy/sub x/O/sub y/ of 30 to 70 nm thickness have been studied. The influence of the film formation conditions on the Dy/sub x/O/sub y/-n-InP [100] interface charge properties are discussed. InP MIS structures with low effective charge density N/sub ss//spl sim/10/sup 11/ cm/sup -2/, interface trap density N/sub it//spl sim/3/spl middot/10/sup 11/ cm/sup -2/ eV/sup -1/ and capacitance-voltage characteristic hysteresis less than 0.3 V have been obtained. It is shown that DyP/sub x/O/sub y/ transition layer formation plays a predominant role in obtaining MIS structures with a very good compatible gate dielectric material for InP MISFET's.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of interface formation and charge properties of MIS structures Al-Dy/sub x/O/sub y/-n-InP(100)\",\"authors\":\"N. Babushkina, S. Malyshev, L.N. Bykova, L. Romanova\",\"doi\":\"10.1109/ASDAM.2000.889520\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Al-Dy/sub x/O/sub y/-n-InP [100] structures with dysprosium oxide films Dy/sub x/O/sub y/ of 30 to 70 nm thickness have been studied. The influence of the film formation conditions on the Dy/sub x/O/sub y/-n-InP [100] interface charge properties are discussed. InP MIS structures with low effective charge density N/sub ss//spl sim/10/sup 11/ cm/sup -2/, interface trap density N/sub it//spl sim/3/spl middot/10/sup 11/ cm/sup -2/ eV/sup -1/ and capacitance-voltage characteristic hysteresis less than 0.3 V have been obtained. It is shown that DyP/sub x/O/sub y/ transition layer formation plays a predominant role in obtaining MIS structures with a very good compatible gate dielectric material for InP MISFET's.\",\"PeriodicalId\":303962,\"journal\":{\"name\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2000.889520\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了Al-Dy/sub x/O/sub y/-n-InP[100]结构的Dy/sub x/O/sub y/氧化镝膜厚度为30 ~ 70 nm。讨论了成膜条件对Dy/sub x/O/sub y/-n-InP[100]界面电荷特性的影响。得到了有效电荷密度N/sub / ss//spl sim/10/sup 11/ cm/sup -2/、界面阱密度N/sub //spl sim/3/spl middot/10/sup 11/ cm/sup -2/ eV/sup -1/、电容-电压特性迟滞小于0.3 V的p MIS结构。结果表明，对于InP型MISFET而言，DyP/sub x/O/sub y/过渡层的形成对于获得具有良好兼容栅极介电材料的MIS结构起着主导作用。

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Investigation of interface formation and charge properties of MIS structures Al-Dy/sub x/O/sub y/-n-InP(100)

Al-Dy/sub x/O/sub y/-n-InP [100] structures with dysprosium oxide films Dy/sub x/O/sub y/ of 30 to 70 nm thickness have been studied. The influence of the film formation conditions on the Dy/sub x/O/sub y/-n-InP [100] interface charge properties are discussed. InP MIS structures with low effective charge density N/sub ss//spl sim/10/sup 11/ cm/sup -2/, interface trap density N/sub it//spl sim/3/spl middot/10/sup 11/ cm/sup -2/ eV/sup -1/ and capacitance-voltage characteristic hysteresis less than 0.3 V have been obtained. It is shown that DyP/sub x/O/sub y/ transition layer formation plays a predominant role in obtaining MIS structures with a very good compatible gate dielectric material for InP MISFET's.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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