Growth of polycrystalline diamond-films for low field electron emission

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889483

V. Malcher, A. Kromka, J. Janı́k, V. Dúbravcová

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Abstract

The potential for using diamond as a negative electron affinity (NEA) material was recognized by Himpsel et al. in 1979 and makes CVD diamond a promising candidate for cold-cathode applications and field emission displays. The current work shows one promising approach to utilize a double bias-assisted hot filament chemical vapor deposition (HFCVD) method for diamond growth. Selected area deposition of diamond films on tungsten wires is successfully achieved in the HFCVD system. Diamond tungsten wires show good electron field emission properties, that is, emission current density J/sub c/=2000 /spl mu/A/cm/sup 2/ (under 23.6 V//spl mu/m) and turn on field of F/sub 0/=12 V//spl mu/m. The effective work function (/spl Phi/) estimated by Fowler-Nordheim plot of the I-V characteristics is /spl Phi/=0.058 eV. The influence of different growth conditions on film quality has been investigated by micro-Raman measurements and optical microscopy.

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用于低场电子发射的多晶金刚石薄膜的生长

Himpsel等人在1979年认识到金刚石作为负电子亲和(NEA)材料的潜力，并使CVD金刚石成为冷阴极应用和场发射显示器的有前途的候选者。目前的工作表明，利用双偏置辅助热丝化学气相沉积(HFCVD)方法生长金刚石是一种很有前途的方法。在HFCVD系统中成功地实现了钨丝上金刚石膜的选择性区域沉积。金刚石钨丝具有良好的电子场发射性能，即发射电流密度J/sub c/=2000 /spl mu/A/cm/sup 2/(低于23.6 V//spl mu/m)，导通场F/sub 0/=12 V//spl mu/m。利用Fowler-Nordheim图估计的I-V特性的有效功函数(/spl Phi/)为/spl Phi/=0.058 eV。通过显微拉曼测量和光学显微镜研究了不同生长条件对薄膜质量的影响。

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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