Ge-film resistance and Si-based diode temperature microsensors

N. S. Boltovets, V.V. Kholevchuk, R. Konakova, V. F. Mitin, E. F. Venger
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Abstract

New types of miniature temperature sensors based on Ge films and silicon diodes have been developed and produced. The Ge film microthermometers are intended for use at temperatures from 1 to 400 K, and silicon microdiodes cover operating temperature range from 1 to 600 K. The designs of sensitive elements and the miniature package, as well as sensor characteristics, are presented.
锗膜电阻和硅基二极管温度微传感器
研制出了基于锗薄膜和硅二极管的新型微型温度传感器。锗薄膜微温度计适用于1至400 K的温度,硅微二极管覆盖1至600 K的工作温度范围。介绍了敏感元件和微型封装的设计,以及传感器的特点。
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