一种新型水性可展环氧负极电子束抗蚀剂的工艺优化及扩散长度评价

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889488

N. Glezos, P. Argitis, D. Velessiotis, I. Raptis, P. Hudek, I. Kostic

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引用次数: 0

摘要

研究了一种新的基于环氧化学的水基可显影化学放大负抗蚀剂(ADEPR)，用于高分辨率、高速电子束光刻。并对该体系的酸扩散系数进行了评价。这种抗蚀剂是用部分氢化的聚(羟基苯乙烯)和环氧树脂聚合物配制的。与纯环氧树脂系统相比，没有膨胀现象，允许光刻高达100 nm，灵敏度为4-8 /spl μ /C/cm/sup 2/ 50 KeV。采用高分辨率线和点曝光来评估扩散系数。D=5.10/sup -14/ cm/sup 2//sec的值略高于纯环氧树脂(EPR)，但仍低于其他商用抗蚀剂。

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Process optimization and diffusion length evaluation of a new aqueous base developable negative epoxy electron beam resist

A new aqueous base developable, chemically amplified negative resist based on epoxy chemistry (ADEPR) is evaluated for high resolution, high-speed e-beam lithography. The acid diffusion coefficient of this system is also evaluated. This resist is formulated using partially hydrogenated poly(hydroxy styrene) and epoxy novolac polymers. The absence of swelling phenomena compared to pure epoxy systems allows lithography up to 100 nm regime and a sensitivity of 4-8 /spl mu/C/cm/sup 2/ at 50 KeV. Both high-resolution line and dot exposures were used in order to evaluate the diffusion coefficient. The value of D=5.10/sup -14/ cm/sup 2//sec fount is a little higher than its pure epoxy counterpart (EPR) but still lower than other commercial resists.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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