GaAs/InGaP基结构中2DEG的电学性质

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889486

R. Kúdela, M. Morvic, M. Kučera, S. Kicin, J. Novák

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引用次数: 0

摘要

本文研究了GaAs/InGaP结构中2DEGs的电学性能。用LP MOVPE在不同温度下生长结构。考察了生长温度和界面生长过程的优化对霍尔迁移率的影响。在77 K下观察到形貌、光学性质和霍尔迁移率之间的相关性。将2DEG通道与掺杂区隔开的间隔层厚度对迁移率也有显著影响。介绍了具有GaAs和InGaAs通道的结构的性质。在GaAs/InGaP结构中实现了46000 cm/sup 2/V/sup -1/s/sup -1/的霍尔迁移率。

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Electrical properties of 2DEG in GaAs/InGaP based structures

Electrical properties of 2DEGs in GaAs/InGaP structures were studied in this paper. The structures were grown by LP MOVPE at various temperatures. The influence of growth temperature and the optimisation of the growth process of interfaces on the Hall mobilities were examinated. Correlations between morphology, optical properties and Hall mobilities at 77 K were observed. The thickness of the spacer, which separated the 2DEG channel from the doping region, had also a significant influence on the mobilities. Properties of the structures with GaAs and InGaAs channels are presented. Hall mobilities of 46000 cm/sup 2/V/sup -1/s/sup -1/ were achieved in the GaAs/InGaP structures.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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