T. Figielski, T. Wosifiski, A. Morawski, A. Makosa, Z. Tkaczyk, J. Wróbel, E. Kamihska, E. Papis, A. Piotrowska, R. Nowakowski
{"title":"半导体纳米结构器件中弹道电子的干扰","authors":"T. Figielski, T. Wosifiski, A. Morawski, A. Makosa, Z. Tkaczyk, J. Wróbel, E. Kamihska, E. Papis, A. Piotrowska, R. Nowakowski","doi":"10.1109/ASDAM.2000.889453","DOIUrl":null,"url":null,"abstract":"We sttidied ballistic tranyiort throiigh a spare pantimi dot defined in a twodimensional electron gas at a C;cyls/AIC;~s-heterosti~ict~~re inlegace by Schottky gates deposited on the top of the heterostrwctiire. We denionstrarc? that the condtrciance of the dot at a low tenperatiire is controlled by qtianttini ititerj2rence of ballistic elccfrons reflected crt the dot sitle-hotittdarie.s, atid cntt be tiincd by U voliugc applied to the gates dejning posiiions of these boundaries.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interference of ballistic electrons in semiconductor nanostructure devices\",\"authors\":\"T. Figielski, T. Wosifiski, A. Morawski, A. Makosa, Z. Tkaczyk, J. Wróbel, E. Kamihska, E. Papis, A. Piotrowska, R. Nowakowski\",\"doi\":\"10.1109/ASDAM.2000.889453\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We sttidied ballistic tranyiort throiigh a spare pantimi dot defined in a twodimensional electron gas at a C;cyls/AIC;~s-heterosti~ict~~re inlegace by Schottky gates deposited on the top of the heterostrwctiire. We denionstrarc? that the condtrciance of the dot at a low tenperatiire is controlled by qtianttini ititerj2rence of ballistic elccfrons reflected crt the dot sitle-hotittdarie.s, atid cntt be tiincd by U voliugc applied to the gates dejning posiiions of these boundaries.\",\"PeriodicalId\":303962,\"journal\":{\"name\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2000.889453\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889453","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interference of ballistic electrons in semiconductor nanostructure devices
We sttidied ballistic tranyiort throiigh a spare pantimi dot defined in a twodimensional electron gas at a C;cyls/AIC;~s-heterosti~ict~~re inlegace by Schottky gates deposited on the top of the heterostrwctiire. We denionstrarc? that the condtrciance of the dot at a low tenperatiire is controlled by qtianttini ititerj2rence of ballistic elccfrons reflected crt the dot sitle-hotittdarie.s, atid cntt be tiincd by U voliugc applied to the gates dejning posiiions of these boundaries.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
