半导体结构中掺杂浓度的光学测定

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889477

A. Babiński, R. Kulawinski, T. Tomaszewicz, J. Baranowski

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引用次数: 0

摘要

介绍了室温下调制Si /spl δ /掺杂伪晶GaAs/InGaAs/GaAs量子阱的电反射率测量。先前提出的电反射偏置波长映射用于表征所研究的结构。傅里叶变换应用于Franz-Keldysh振荡揭示了电场在结构中的值。利用/spl δ /掺杂平面上下电场的差值来计算离子掺杂浓度。我们的分析也得到了/spl δ /-层的位置。

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Optical determination of /spl delta/-doping concentration in semiconductor structures

The electroreflectance measurements on modulation Si /spl delta/-doped pseudomorphic GaAs/InGaAs/GaAs quantum well at room temperature are presented. Previously proposed Electroreflectance Bias-Wavelength mapping is used for characterisation of investigated structure. The Fourier transform applied to Franz-Keldysh oscillations revealed the value of electric field in the structure. A difference between an electric field above and below the /spl delta/-doping plane was used to find the ionized dopant concentration. The position of the /spl delta/-layer was also obtained from our analysis.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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