MBE制备的高可靠连续波应变层InGaAs/GaAs (/spl lambda/=980 nm) SCH SQW激光器

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889533

P. Sajewicz, T. Piwoński, K. Reginski, B. Mroziewicz, M. Bugajski

{"title":"MBE制备的高可靠连续波应变层InGaAs/GaAs (/spl lambda/=980 nm) SCH SQW激光器","authors":"P. Sajewicz, T. Piwoński, K. Reginski, B. Mroziewicz, M. Bugajski","doi":"10.1109/ASDAM.2000.889533","DOIUrl":null,"url":null,"abstract":"Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980 nm, broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation. Threshold current densities of the order of J/sub th//spl ap/280 A/cm/sup 2/ (for a resonator length L=700 /spl mu/m) and differential efficiency /spl eta/=0.4 W/A (41%) were obtained. The wall-plug efficiency was 38%. Theoretical estimations of these quantities obtained by numerical modelling of devices were J/sub th/=210 A/cm and /spl eta/=0.47 W/A respectively.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Highly reliable CW strained layer InGaAs/GaAs (/spl lambda/=980 nm) SCH SQW lasers fabricated by MBE\",\"authors\":\"P. Sajewicz, T. Piwoński, K. Reginski, B. Mroziewicz, M. Bugajski\",\"doi\":\"10.1109/ASDAM.2000.889533\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980 nm, broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation. Threshold current densities of the order of J/sub th//spl ap/280 A/cm/sup 2/ (for a resonator length L=700 /spl mu/m) and differential efficiency /spl eta/=0.4 W/A (41%) were obtained. The wall-plug efficiency was 38%. Theoretical estimations of these quantities obtained by numerical modelling of devices were J/sub th/=210 A/cm and /spl eta/=0.47 W/A respectively.\",\"PeriodicalId\":303962,\"journal\":{\"name\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"volume\":\"128 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2000.889533\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用分子束外延(MBE)技术制备了应变层InGaAs/GaAs单量子阱(SCH SQW)激光器。采用肖特基隔离技术制备了高可靠性连续波980 nm宽接触泵浦激光器。阈值电流密度为J/sub //spl ap/280 A/cm/sup 2/(当谐振腔长度为L=700 /spl mu/m时)，差分效率/spl eta/=0.4 W/A(41%)。壁式插拔效率为38%。通过器件数值模拟得到的这些量的理论估计分别为J/sub /=210 A/cm和/spl eta/=0.47 W/A。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Highly reliable CW strained layer InGaAs/GaAs (/spl lambda/=980 nm) SCH SQW lasers fabricated by MBE

Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980 nm, broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation. Threshold current densities of the order of J/sub th//spl ap/280 A/cm/sup 2/ (for a resonator length L=700 /spl mu/m) and differential efficiency /spl eta/=0.4 W/A (41%) were obtained. The wall-plug efficiency was 38%. Theoretical estimations of these quantities obtained by numerical modelling of devices were J/sub th/=210 A/cm and /spl eta/=0.47 W/A respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

自引率

0.00%

发文量