掺铍低温生长MBE GaAs:用于太赫兹频率范围内光混合的材料

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889470

J. Darmo, F. Schaffer, A. Forster, P. Kordos

{"title":"掺铍低温生长MBE GaAs:用于太赫兹频率范围内光混合的材料","authors":"J. Darmo, F. Schaffer, A. Forster, P. Kordos","doi":"10.1109/ASDAM.2000.889470","DOIUrl":null,"url":null,"abstract":"Several topics related to the performance of a photoconductive mixer based on low-temperature-grown MBE GaAs are addressed. Approaches to a reduction of charge carrier lifetime and an improvement of the heat dissipation from structure are discussed. Relevant experimental data obtained for Be-doped GaAs are presented.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range\",\"authors\":\"J. Darmo, F. Schaffer, A. Forster, P. Kordos\",\"doi\":\"10.1109/ASDAM.2000.889470\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Several topics related to the performance of a photoconductive mixer based on low-temperature-grown MBE GaAs are addressed. Approaches to a reduction of charge carrier lifetime and an improvement of the heat dissipation from structure are discussed. Relevant experimental data obtained for Be-doped GaAs are presented.\",\"PeriodicalId\":303962,\"journal\":{\"name\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2000.889470\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

讨论了基于低温生长MBE GaAs的光导混合器的性能。讨论了缩短载流子寿命和改善结构散热的方法。给出了be掺杂GaAs的相关实验数据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range

Several topics related to the performance of a photoconductive mixer based on low-temperature-grown MBE GaAs are addressed. Approaches to a reduction of charge carrier lifetime and an improvement of the heat dissipation from structure are discussed. Relevant experimental data obtained for Be-doped GaAs are presented.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

自引率

0.00%

发文量