F. Dubecký, B. Zat’ko, J. Darmo, M. Sekáčová, M. Krempaský, V. Nečas, S. Hlavac, M. Rucek, R. Senderák, B. Szentpáli
{"title":"On spectrometric performance of GaAs-based radiation detectors","authors":"F. Dubecký, B. Zat’ko, J. Darmo, M. Sekáčová, M. Krempaský, V. Nečas, S. Hlavac, M. Rucek, R. Senderák, B. Szentpáli","doi":"10.1109/ASDAM.2000.889548","DOIUrl":null,"url":null,"abstract":"The basic problems and advantages related to spectrometric applications of GaAs-based radiation detectors for the X- and /spl gamma/-ray region are discussed. Two types of detectors are tested, based on (i) semi-insulating GaAs bulk substrate and (ii) vapor phase epitaxy GaAs. Pulse height spectra for detection of /sup 241/Am and /sup 57/Co radionuclide decay standards are demonstrated. With a small volume GaAs detector energy resolution <1 keV is achievable at room temperature. The necessity of a low noise F-E readout electronic chain is demonstrated.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889548","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The basic problems and advantages related to spectrometric applications of GaAs-based radiation detectors for the X- and /spl gamma/-ray region are discussed. Two types of detectors are tested, based on (i) semi-insulating GaAs bulk substrate and (ii) vapor phase epitaxy GaAs. Pulse height spectra for detection of /sup 241/Am and /sup 57/Co radionuclide decay standards are demonstrated. With a small volume GaAs detector energy resolution <1 keV is achievable at room temperature. The necessity of a low noise F-E readout electronic chain is demonstrated.