Design and technology of InGaP/GaAs DHBTs

Abstract

A comparison of the DC and RF performance of InGaP/GaAs based SHBT and DHBT is made. These devices have been fabricated using a planar self-aligned technology using ion implant isolation. It was demonstrated that DHBT is the most promising device for power amplifier applications. Finally a new collector design approach for minimising the base transit time in DHBTs is suggested.