异质结构GaAs/ in /sub -x/ Ga/sub - 1-x/As/GaAs中高应变量子阱均匀组成的不稳定性

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889538

A. Klimovskaya, A. Grigor’ev, V. G. Gule, J. A. Dryha, V. Litovchenko

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摘要

利用光致发光(PL)技术对嵌入在GaAs基体中的In/sub x/Ga/sub 1-x/As量子w层进行了表征。我们建立了PL参数与层和矩阵晶格参数不匹配之间的关系。在高应变层中，观察到多个PL带而不是一个带。这是由于仅在高应变层中产生的In含量的交替。

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Instability of homogeneous composition of highly strained QWs in heterostructures GaAs/In/sub x/Ga/sub 1-x/As/GaAs

In/sub x/Ga/sub 1-x/As QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL) study. We have established the relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix. In highly strained layers several PL bands were observed instead of one band. This was shown to be a result of alternating content of In arised only in highly strained layers.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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