Correlation between diffusion length and Hall mobility in different GaAs epitaxial layers

Abstract

The diffusion length of minority carriers in n-type GaAs epitaxial layers has been studied in this work. The value of diffusion length of minority carriers was determined from the analysis of the photoresponse of an electrolytic barrier applied to the sample surface. The diffusion length on LPE layers was found to be smaller than that on VPE layers. This behaviour is discussed here.