RBS study of amorphous silicon carbide films annealed by pulse electron beam

We present properties of nitrogen-doped amorphous silicon carbide films that were grown by a plasma enhanced chemical vapour deposition (PE CVD) technique and annealed by pulsed electron beam. Samples with different amounts of N were achieved by a small addition of ammonia NH/sub 3/ into the gas mixture of silane SiH/sub 4/ and methane CH/sub 4/, which were directly introduced into the reaction chamber. The actual amount of nitrogen in the SiC films was determined by Rutherford backscattering spectrometry (RBS). A simulation of the RBS spectra was used to calculate the concentration of carbon, silicon and nitrogen.