电解质-半导体界面对砷化镓结构掺杂谱线测量的影响

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889514

R. Kinder, B. Paszkiewicz, B. Ściana, L. Huleny

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引用次数: 1

摘要

研究了0.1 M铁电解质-砷化镓界面的电学行为。重点讨论了电解质-砷化镓界面的特性及其对电容-电压测量的影响。采用电化学C-V技术和阻抗谱法测定了界面的电学性能。

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The influence of the electrolyte-semiconductor interface on the doping profile measurement of a GaAs structure

The electrical behavior of the 0.1 M Tiron electrolyte-GaAs interface has been investigated. Attention is centred upon the properties of the electrolyte-GaAs interface and its influence on the capacitance-voltage measurements. Electrical properties of the interface were measured by electrochemical C-V techniques and impedance spectroscopy.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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