Photoelectric properties of Schottky barriers based on porous silicon

Abstract

Spectral and dynamic characteristics of Al-porous Si structure prepared by electrochemical anodizing of monocrystalline silicon in the transient mode (/spl rho/=0.1-0.01 Ohm/spl middot/cm) have been studied. It is found that for blocking voltage corresponding to current above threshold flowing through the structure there occurs amplification of the photocurrent. The photocurrent amplification process is explained by light-induced modulation of porous Si resistance.