高磁阻效应、低矫顽力的阴极溅射坡莫合金薄膜

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889471

G. Stangl, P. Aigner, P. Hudek, I. Kostic, R. Chabicovsky, H. Hauser, J. Hochreiter, K. Riedling

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引用次数: 1

摘要

在50 nm厚度下，Ni - 81%-Fe - 19%直流溅射薄膜的各向异性磁阻(AMR)效应达到/spl δ //spl rho///spl rho/=3.93%。研究主要集中在目标电流、目标-衬底距离以及目标和衬底材料温度的影响上。由于诱导各向异性，坡莫合金薄膜的易轴矫顽力随外加偏磁场的变化在100 ~ 200 a /m之间。直流磁化曲线表现出几乎理想的斯通-沃尔法斯行为，硬轴矫顽力在0和20 a /m之间。

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Cathode sputtered permalloy films of high AMR effect and low coercivity

The anisotropic magnetoresistive (AMR) effect of dc sputtered Ni 81%-Fe 19% films has been increased up to /spl Delta//spl rho///spl rho/=3.93% at 50 nm thickness. Investigations have been concentrated on the influence of the target current, the target-substrate distance, and of the temperature of both target and substrate material. As a function of the applied magnetic bias field, the easy axis coercivity of the permalloy film is between 100 A/m and 200 A/m due to induced anisotropy. The dc magnetisation curves represents an almost ideal Stoner-Wohlfarth behaviour with a hard axis coercivity between 0 and 20 A/m.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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