Cathode sputtered permalloy films of high AMR effect and low coercivity

G. Stangl, P. Aigner, P. Hudek, I. Kostic, R. Chabicovsky, H. Hauser, J. Hochreiter, K. Riedling
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引用次数: 1

Abstract

The anisotropic magnetoresistive (AMR) effect of dc sputtered Ni 81%-Fe 19% films has been increased up to /spl Delta//spl rho///spl rho/=3.93% at 50 nm thickness. Investigations have been concentrated on the influence of the target current, the target-substrate distance, and of the temperature of both target and substrate material. As a function of the applied magnetic bias field, the easy axis coercivity of the permalloy film is between 100 A/m and 200 A/m due to induced anisotropy. The dc magnetisation curves represents an almost ideal Stoner-Wohlfarth behaviour with a hard axis coercivity between 0 and 20 A/m.
高磁阻效应、低矫顽力的阴极溅射坡莫合金薄膜
在50 nm厚度下,Ni - 81%-Fe - 19%直流溅射薄膜的各向异性磁阻(AMR)效应达到/spl δ //spl rho///spl rho/=3.93%。研究主要集中在目标电流、目标-衬底距离以及目标和衬底材料温度的影响上。由于诱导各向异性,坡莫合金薄膜的易轴矫顽力随外加偏磁场的变化在100 ~ 200 a /m之间。直流磁化曲线表现出几乎理想的斯通-沃尔法斯行为,硬轴矫顽力在0和20 a /m之间。
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