不同砷化镓外延层中扩散长度与霍尔迁移率的关系

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889497

Á. Nemcsics, K. Somogyi

{"title":"不同砷化镓外延层中扩散长度与霍尔迁移率的关系","authors":"Á. Nemcsics, K. Somogyi","doi":"10.1109/ASDAM.2000.889497","DOIUrl":null,"url":null,"abstract":"The diffusion length of minority carriers in n-type GaAs epitaxial layers has been studied in this work. The value of diffusion length of minority carriers was determined from the analysis of the photoresponse of an electrolytic barrier applied to the sample surface. The diffusion length on LPE layers was found to be smaller than that on VPE layers. This behaviour is discussed here.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Correlation between diffusion length and Hall mobility in different GaAs epitaxial layers\",\"authors\":\"Á. Nemcsics, K. Somogyi\",\"doi\":\"10.1109/ASDAM.2000.889497\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The diffusion length of minority carriers in n-type GaAs epitaxial layers has been studied in this work. The value of diffusion length of minority carriers was determined from the analysis of the photoresponse of an electrolytic barrier applied to the sample surface. The diffusion length on LPE layers was found to be smaller than that on VPE layers. This behaviour is discussed here.\",\"PeriodicalId\":303962,\"journal\":{\"name\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2000.889497\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889497","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

本文研究了n型砷化镓外延层中少数载流子的扩散长度。通过分析施加于样品表面的电解势垒的光响应，确定了少数载流子的扩散长度。LPE层的扩散长度小于VPE层的扩散长度。这里讨论这种行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Correlation between diffusion length and Hall mobility in different GaAs epitaxial layers

The diffusion length of minority carriers in n-type GaAs epitaxial layers has been studied in this work. The value of diffusion length of minority carriers was determined from the analysis of the photoresponse of an electrolytic barrier applied to the sample surface. The diffusion length on LPE layers was found to be smaller than that on VPE layers. This behaviour is discussed here.

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来源期刊

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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