多孔硅基肖特基势垒的光电性质

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889530

V.I. Blynski, S.K. Lazarouk, S. Malyshev, T.P. Matskevich

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摘要

研究了在瞬态模式(/spl rho/=0.1 ~ 0.01 Ohm/spl middot/cm)下电化学阳极氧化单晶硅制备的al -多孔硅结构的光谱和动态特性。研究发现，当阻挡电压大于阈值的电流流过该结构时，会产生光电流的放大。光电流放大过程是由光诱导调制多孔硅电阻来解释的。

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Photoelectric properties of Schottky barriers based on porous silicon

Spectral and dynamic characteristics of Al-porous Si structure prepared by electrochemical anodizing of monocrystalline silicon in the transient mode (/spl rho/=0.1-0.01 Ohm/spl middot/cm) have been studied. It is found that for blocking voltage corresponding to current above threshold flowing through the structure there occurs amplification of the photocurrent. The photocurrent amplification process is explained by light-induced modulation of porous Si resistance.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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