衬底制备对InP悬臂梁断裂性能的影响

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889527

I. Behrens, E. Peiner, A. Bakin, A. Schlachetzki

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引用次数: 0

摘要

在本研究中，我们研究了衬底制备对用于异质微加工的磷化铟层力学性能的影响。这些层是通过金属有机气相外延在硅上生长的。利用磷化铟对硅的蚀刻选择性，实现了面向和晶体方向的独立悬臂梁。断裂应力测量显示，在结构衬底上生长的一层制造的悬臂比在非结构硅上生长的悬臂显示出更低的值。

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Influence of substrate preparation on fracture properties of InP cantilevers

In this study we investigate the influence of the substrate preparation on the mechanical properties of indium phosphide layers used for hetero-micromachining. These layers were grown on silicon by metalorganic vapour-phase epitaxy. Exploiting the etching selectivity of indium phosphide versus silicon we realized freestanding cantilevers oriented in <100> and <110> crystal directions. Fracture-stress measurements revealed that cantilevers fabricated from a layer grown on structured substrates show a lower value compared to those grown on unstructured silicon.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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