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2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)最新文献

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Analysis of Material, Design & LER of Advanced BEOL Metal Lines Using Process Modeling 基于过程建模的先进BEOL金属生产线材料分析、设计与LER
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154880
Daebin Yim, B. Vincent
{"title":"Analysis of Material, Design & LER of Advanced BEOL Metal Lines Using Process Modeling","authors":"Daebin Yim, B. Vincent","doi":"10.1109/IITC/MAM57687.2023.10154880","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154880","url":null,"abstract":"We study interconnect metallization options in advanced logic BEOL. Our goal is to choose interconnect materials and process integration options that will reduce RC delay and improve electrical performance. We use process modeling and electrical simulation methods to investigate the impact of metal materials, process variations and LER on the resistance and capacitance of interconnects. Three metal material options are selected, including conventional Cu and Co schemes along with barrier-less Ru. These metal choices are benchmarked to compare and choose the best material and dimensional attributes for advanced Logic BEOL, where traditional scaling may exacerbate RC delay and degrade performance.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123302092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Towards knowledge-enhanced process models for semiconductor fabrication 面向半导体制造的知识增强过程模型
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154872
Tom Rothe, Mudassir Ali Sayyed, Jan Langer, K. Gottfried, Jörg Schuster, Martin Stoll, H. Kuhn
{"title":"Towards knowledge-enhanced process models for semiconductor fabrication","authors":"Tom Rothe, Mudassir Ali Sayyed, Jan Langer, K. Gottfried, Jörg Schuster, Martin Stoll, H. Kuhn","doi":"10.1109/IITC/MAM57687.2023.10154872","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154872","url":null,"abstract":"We present a novel approach for modeling semiconductor processing that uses machine learning to combine expert knowledge, physics models, and actual process data into so-called knowledge-enhanced process models. Our method is illustrated on models for chemical-mechanical planarization, a key technology for semiconductor processing. It is an important step towards robust, accurate, and transferable, real-time models for digital twins of semiconductor processes and process chains.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116866032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic layer etching of molybdenum with fluorination and ion bombardment 用氟化和离子轰击法刻蚀钼的原子层
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154833
Yongjae Kim, Ho-Won Kang, Heeju Ha, H. Chae
{"title":"Atomic layer etching of molybdenum with fluorination and ion bombardment","authors":"Yongjae Kim, Ho-Won Kang, Heeju Ha, H. Chae","doi":"10.1109/IITC/MAM57687.2023.10154833","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154833","url":null,"abstract":"Atomic layer etching (ALE) process for Mo was developed with surface fluorination using CHF<inf>3</inf> or C<inf>4</inf>F<inf>8</inf> plasmas and ion bombardment using Ar plasma. The Mo surface was fluorinated with fluorocarbon generated by CHF<inf>3</inf> or C<inf>4</inf>F<inf>8</inf> plasmas, and fluorinated Mo was etched by Ar plasma. The C<inf>4</inf>F<inf>8</inf> plasma produced fluorine-rich fluorocarbon layer compared to the CHF<inf>3</inf> plasma and etch per cycle (EPC) of Mo was about 3 times higher in C<inf>4</inf>F<inf>8</inf> plasma than in CHF<inf>3</inf> plasma. EPC of Mo was investigated by changing the bias voltage of Ar plasma, and ALE window was confirmed in the range of 100 ~ 225 V. The EPC of Mo in the ALE window was determined to be 0.8 nm/cycle for CHF<inf>3</inf> plasma and 2.8 nm/cycle for C<inf>4</inf>F<inf>8</inf> plasma, and it was self-limited with increasing Ar plasma time. Fluorine-rich fluorocarbon layer on the Mo surface increases the EPC of Mo.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114155206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphene Cap Formation on Nickel Thin Films by Thermal CVD at Low Temperature 低温热气相沉积在镍薄膜上形成石墨烯帽
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154774
Yumehito Tenmyo, Reno Hasumi, K. Ueno
{"title":"Graphene Cap Formation on Nickel Thin Films by Thermal CVD at Low Temperature","authors":"Yumehito Tenmyo, Reno Hasumi, K. Ueno","doi":"10.1109/IITC/MAM57687.2023.10154774","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154774","url":null,"abstract":"A graphene cap was deposited on a 30 nm Ni thin film at a low temperature of 400°C by CVD matching the interconnect process temperature. As a result, oxidation of Ni was inhibited, and a low resistivity of 12.5 μΩcm was obtained with a film thickness of 30nm. Graphene-capped Ni may have a low-resistance in fine line width.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114162405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A simple analytical model to describe time-resolved concentrations of plasma species 一个简单的分析模型来描述等离子体物质的时间分辨浓度
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154646
Michael Haase, Nils Dittmar, M. Küchler, Danny Reuter
{"title":"A simple analytical model to describe time-resolved concentrations of plasma species","authors":"Michael Haase, Nils Dittmar, M. Küchler, Danny Reuter","doi":"10.1109/IITC/MAM57687.2023.10154646","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154646","url":null,"abstract":"Based on the observations of the time behavior of the etching product SiF4, an analytical model was derived. Based on the physical quantities in the model equation, the production rate and the suppression rate are introduced, which can be used to describe the process.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131065618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-scale simulation of epitaxial processes 外延过程的多尺度模拟
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154676
Linda Jäckel, A. Zienert, Erik E. Lorenz, Max Huber, J. Schuster
{"title":"Multi-scale simulation of epitaxial processes","authors":"Linda Jäckel, A. Zienert, Erik E. Lorenz, Max Huber, J. Schuster","doi":"10.1109/IITC/MAM57687.2023.10154676","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154676","url":null,"abstract":"We present a multi-scale modeling strategy to investigate and optimize epitaxial growth. As example processes, we study Si and SiGe epitaxial films in various equipments. While reactor-scale and feature-scale simulation approaches are useful on themselves, only the combination of both approaches is capable of fully capturing the physical and chemical processes of epitaxial growth on structured substrates.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126903750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Study Of Interface & Bulk Defectivity In Ultra-Thin BEOL Dielectrics By Using Low Frequency Noise Spectroscopy 利用低频噪声光谱研究超薄BEOL介质的界面和体损
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154814
N. Saini, D. Tierno, K. Croes, V. Afanas'ev
{"title":"Experimental Study Of Interface & Bulk Defectivity In Ultra-Thin BEOL Dielectrics By Using Low Frequency Noise Spectroscopy","authors":"N. Saini, D. Tierno, K. Croes, V. Afanas'ev","doi":"10.1109/IITC/MAM57687.2023.10154814","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154814","url":null,"abstract":"Time-Dependent Dielectric Breakdown (TDDB) is used to assess dielectric failures. A limitation of TDDB is the lack of physical insight. In this paper, we therefore conduct a study, employing Low Frequency Noise (LFN), on the reliability of Back End Of Line (BEOL) dielectrics (SiCN and Al2O3). We carry out a stress experiment, in which the dielectric is sensed before and after stress. For SiCN, we find that deterioration is dominated by dielectric bulk defectivity. For Al2O3, however, metal-dielectric interface defectivity is the dominant contributor to deterioration. Our findings provide a physical explanation for peculiarities observed in TDDB.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128236299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pre-treatment study for barrier-less Ruthenium filling into single damascene via of sub 20nm hole size 孔径小于20nm的单孔无阻挡填充钌的预处理研究
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154739
R. Yonezawa, K. Yu, H. Aizawa, H. Suzuki, C. Wajda, G. Leusink
{"title":"Pre-treatment study for barrier-less Ruthenium filling into single damascene via of sub 20nm hole size","authors":"R. Yonezawa, K. Yu, H. Aizawa, H. Suzuki, C. Wajda, G. Leusink","doi":"10.1109/IITC/MAM57687.2023.10154739","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154739","url":null,"abstract":"Ru filling in small vias is challenging. Voids in the via will cause high via resistance. Ru filling with dep-etch sequence helps to minimize void formation; however, it is not productivity friendly. We report Ru fill without void in sub 20nm diameter vias using a surface treatment. New surface treatment has been introduced as a treatment to manage the Ru deposition rate on SiO2 and the bottom metal.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115841390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-level Semi-damascene interconnect with fully self-aligned Vias at MP18 两级半大马士革互连与完全自对准过孔在MP18
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154682
G. Marti, Ankit Pokhrel, G. Murdoch, G. Delie, Anshul Gupta, P. Marien, A. Lesniewska, S. Decoster, Souvik Kundu, Q. Le, Y. Oniki, B. Kenens, Y. Hermans, Seongho Park, Z. Tokei
{"title":"Two-level Semi-damascene interconnect with fully self-aligned Vias at MP18","authors":"G. Marti, Ankit Pokhrel, G. Murdoch, G. Delie, Anshul Gupta, P. Marien, A. Lesniewska, S. Decoster, Souvik Kundu, Q. Le, Y. Oniki, B. Kenens, Y. Hermans, Seongho Park, Z. Tokei","doi":"10.1109/IITC/MAM57687.2023.10154682","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154682","url":null,"abstract":"We present the functionality of a semi-damascene integration scheme with fully self-aligned vias (FSAV) for interconnects varying 26 to 18nm metal pitch, using an EUV-based SADP scheme and subsequent direct etch of Ru, manufactured on 300mm wafers. The integration flow uses the subtractive etching principle of Ru on two subsequent metal levels. Single via resistance landing on 18nm pitch Ru lines shows that > 85% of the devices meet the target of <50Ω. Furthermore, the via chain offers a yield of 60% with a resistance close to the target of ~5k Ω. Besides, we show good uniformity and high VBD via-to-line with MP20 to MP26, establishing FSAV.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115101664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrascaled graphene-capped interconnects: a quantum mechanical study 超尺度石墨烯覆盖互连:量子力学研究
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154656
Peter D. Reyntjens, M. L. Van de Put, W. Vandenberghe, B. Sorée
{"title":"Ultrascaled graphene-capped interconnects: a quantum mechanical study","authors":"Peter D. Reyntjens, M. L. Van de Put, W. Vandenberghe, B. Sorée","doi":"10.1109/IITC/MAM57687.2023.10154656","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154656","url":null,"abstract":"In this theoretical study, we assess the impact of a graphene capping layer on the resistivity of defective, extremely scaled interconnects. We investigate the effect of graphene capping on the electronic transport in ultrascaled interconnects, in the presence of grain boundary defects in the metal layer. We compare the results obtained using our quantum mechanical model to a simple parallel-conductor model and find that the parallel-conductor model does not capture the effect of the graphene cap correctly. At 0.5 nm metal thickness, the parallel-conductor model underestimates the conductivity by 3.0% to 4.0% for single-sided and double sided graphene capping, respectively.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129957769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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