Graphene Cap Formation on Nickel Thin Films by Thermal CVD at Low Temperature

Abstract

A graphene cap was deposited on a 30 nm Ni thin film at a low temperature of 400°C by CVD matching the interconnect process temperature. As a result, oxidation of Ni was inhibited, and a low resistivity of 12.5 μΩcm was obtained with a film thickness of 30nm. Graphene-capped Ni may have a low-resistance in fine line width.