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2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)最新文献

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Ruthenium and Rhodium Vertical Interconnect Formation Using Gas Phase Electrodeposition 气相电沉积法形成钌铑垂直互连
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154806
Mohammad Mobassar Hossain, Leslie Schlag, Benedikt C. Wolz, M. Ziegler, Helene Nahrstedt, Helen Reichel, J. Pezoldt, H. Jacobs
{"title":"Ruthenium and Rhodium Vertical Interconnect Formation Using Gas Phase Electrodeposition","authors":"Mohammad Mobassar Hossain, Leslie Schlag, Benedikt C. Wolz, M. Ziegler, Helene Nahrstedt, Helen Reichel, J. Pezoldt, H. Jacobs","doi":"10.1109/IITC/MAM57687.2023.10154806","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154806","url":null,"abstract":"This paper presents localized gas phase electrodeposition of ruthenium (Ru) and rhodium (Rh) species into vertical interconnects. A spark discharge generates gas ions and charged species of the desired metal, which are transported by a gas flow and form a plasma jet. Prior lateral nano-bridge growth is further developed and enables the localized metal species deposition into vertical interconnect openings. This approach is additive and saves rare materials during processing. The process allows precise adjustment of the diameter, airgap size, and top finishing bump of the vertical interconnect.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131997337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Formation of Ru/ZnO Multifunctional Bilayer through Area Selective Atomic Layer Deposition for Advanced Cu Metallization 区域选择性原子层沉积制备Ru/ZnO多功能双分子层的研究
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154647
Y. Mori, Taehoon Cheon, Y. Kotsugi, Youn-Hye Kim, W. Kwon, Young-Bae Park, Soo‐Hyun Kim
{"title":"The Formation of Ru/ZnO Multifunctional Bilayer through Area Selective Atomic Layer Deposition for Advanced Cu Metallization","authors":"Y. Mori, Taehoon Cheon, Y. Kotsugi, Youn-Hye Kim, W. Kwon, Young-Bae Park, Soo‐Hyun Kim","doi":"10.1109/IITC/MAM57687.2023.10154647","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154647","url":null,"abstract":"We report the self-formation of multifunctional Ru/ZnO bilayer through area-selective atomic layer deposition (AS-ALD) for Cu interconnect technology. ALD-ZnO as a diffusion barrier and glue layer is selectively grown on SiO2 not on Cu using dodecanethiol (DDT) as an inhibitor. ALD-Ru as a liner and seed layer is grown on both ZnO and Cu surfaces using Ru metalorganic precursor, tricarbonyl(trimethylenemethane)-ruthenium [Ru(TMM)(CO)3]. The properties of Ru/ZnO bilayer are evaluated by diffusion barrier test and interfacial adhesion energy measurement of Cu/Ru/ZnO/Si multilayer. As a result, the formation of Cu silicides and the conductivity degradation do not occur with an increase in the annealing temperature up to 700 °C. The interfacial adhesion energy of Ru/SiO2 structure is measured using double cantilever beam test. Interfacial adhesion energy increases with ZnO (2 nm) between Ru and SiO2.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134356118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface Topography Control on Cu Pad for Hybrid Bonding 杂化键合铜焊盘表面形貌控制
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154869
Kohei Nakayama, T. Iwata, Sodai Ebiko, La Thi Ngoc Mai, Ken Harada, Masahiro Yokoyama, Y. Kawase, F. Inoue
{"title":"Surface Topography Control on Cu Pad for Hybrid Bonding","authors":"Kohei Nakayama, T. Iwata, Sodai Ebiko, La Thi Ngoc Mai, Ken Harada, Masahiro Yokoyama, Y. Kawase, F. Inoue","doi":"10.1109/IITC/MAM57687.2023.10154869","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154869","url":null,"abstract":"Both wafer level and die level hybrid bonding is a vital for interconnect pitch scaling of advanced node chiplet/3D integration. The nano-level topography control before bonding is the crucial factor to realize high bonding yield. In this study, In-Situ corrosion behavior in the CMP by the slurry component was investigated in various methods. The difference of the corrosion current between Cu and Ta was able to be adjusted by H2O2 concentration. In addition, post-CMP cleaning may cause further recess of Cu pad while removing the carbon contamination. Therefore, we investigated the impact of post-CMP clean for Cu pad recess, as well as the N2 plasma, which is used to activate surface for bonding. XPS and AFM verified that the plasma activation could decompose BTA residues without increasing the surface roughness. These results foresee us the optimized surface topography formation process for fine pitch hybrid bonding.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"405 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122194585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Film Growth from Particle Raytracing: A Simulation Method for Vapor Deposition Processes with Changing Surface Topographies 粒子射线追踪法的薄膜生长:一种改变表面形貌的气相沉积过程的模拟方法
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154705
Erik E. Lorenz, Joshua Gehre, L. Jäckel, J. Schuster
{"title":"Film Growth from Particle Raytracing: A Simulation Method for Vapor Deposition Processes with Changing Surface Topographies","authors":"Erik E. Lorenz, Joshua Gehre, L. Jäckel, J. Schuster","doi":"10.1109/IITC/MAM57687.2023.10154705","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154705","url":null,"abstract":"We present a numerical method for the simulation of vapor deposition processes in complex 3D microstructures, which couples a raytracing-based particle Monte Carlo transport model with Level Set methods for thin film growth. Through the incorporation of different particle-surface interaction models, our method models a wide range of deposition techniques, including Physical Vapor Deposition (PVD), Chemical Vapor Deposition and Atomic Layer Deposition (ALD). We demonstrate our method on trench filling with a two-step copper resputter PVD process and a model ALD process.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124340099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Airgap Integration on Patterned Metal Lines for Advanced Interconnect Performance Scaling 用于高级互连性能扩展的金属线气隙集成
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154628
H.K. Chang, H.Y. Huang, T. Y. Lo, S.K. Lee, K.W. Yang, C.L. Tang, Gary Liu, C.T. Wu, M. Lin, W.C. Chu, T.J. Kuo, S. Fu, H.W. Tien, C. Tsai, Megan Wei, H.P. Chen, M.H. Lee, C.W. Lu, W. Shue, M. Cao
{"title":"Airgap Integration on Patterned Metal Lines for Advanced Interconnect Performance Scaling","authors":"H.K. Chang, H.Y. Huang, T. Y. Lo, S.K. Lee, K.W. Yang, C.L. Tang, Gary Liu, C.T. Wu, M. Lin, W.C. Chu, T.J. Kuo, S. Fu, H.W. Tien, C. Tsai, Megan Wei, H.P. Chen, M.H. Lee, C.W. Lu, W. Shue, M. Cao","doi":"10.1109/IITC/MAM57687.2023.10154628","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154628","url":null,"abstract":"A novel process scheme combining airgap integration with patterned metal lines is introduced. Scheme feasibility is demonstrated on interconnect pitches targeting for 2nm technology node and beyond. Up to 25% coupling capacitance reduction compared to state-of-the-art copper damascene interconnect is achieved by integrating airgap to directly patterned metal lines. Simultaneous line resistance reduction is made possible by proper conductor selection to enable larger grain size and free of metal barrier process required in conventional copper damascene scheme. Performance scalability is demonstrated through the well-controlled airgap height control enabled by the incorporation of a novel airgap formation material removable by thermal process. Finally, scheme robustness is demonstrated through electrical and reliability tests.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126563719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TaN thin film study for Superconducting BEOL integration 超导BEOL集成钽薄膜研究
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154766
R. Segaud, T. Chêne, P. Gergaud, S. Minoret, F. Gustavo, J. Garrione, A. Royer, F. Nemouchi
{"title":"TaN thin film study for Superconducting BEOL integration","authors":"R. Segaud, T. Chêne, P. Gergaud, S. Minoret, F. Gustavo, J. Garrione, A. Royer, F. Nemouchi","doi":"10.1109/IITC/MAM57687.2023.10154766","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154766","url":null,"abstract":"Superconducting materials integration is one of the emerging subjects for quantum applications. This paper proposes an integration scheme based on superconducting layer etching. A material selection is proposed for interconnections including metal and dielectric. Then, a focus is realised on TaN layers as a potential technological choice. The deposition process window is explored in term of N2 flow and thickness leading to a Tc up to 2 K for 40 nm of TaN.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125306831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3D Thin Film Metrology without Cross-Sectional Sampling 无横截面抽样的三维薄膜计量
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154886
A. Philip, M. Utriainen, T. Werner, Pasi Hyttinen, J. Saarilahti, Jussi Kinnunen, Feng Gao
{"title":"3D Thin Film Metrology without Cross-Sectional Sampling","authors":"A. Philip, M. Utriainen, T. Werner, Pasi Hyttinen, J. Saarilahti, Jussi Kinnunen, Feng Gao","doi":"10.1109/IITC/MAM57687.2023.10154886","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154886","url":null,"abstract":"Conformal coating in high aspect ratio substrates is a crucial factor in the development of next generation 3D semiconductor devices. Conventional approaches of employing vertical high aspect ratio substrates for conformality studies have usually been restricted by the tedious analytical technique requirements. Here, we present an innovative solution for this problem by introducing lateral high aspect ratio substrates; PillarHall® LHAR4 silicon test chips together with simple, fast and accurate metrology tools. The current work also reports the non-organic adhesive approach for the integration of these chips in 300 mm wafer aiming at wafer level processing.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114967765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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