R. Segaud, T. Chêne, P. Gergaud, S. Minoret, F. Gustavo, J. Garrione, A. Royer, F. Nemouchi
{"title":"TaN thin film study for Superconducting BEOL integration","authors":"R. Segaud, T. Chêne, P. Gergaud, S. Minoret, F. Gustavo, J. Garrione, A. Royer, F. Nemouchi","doi":"10.1109/IITC/MAM57687.2023.10154766","DOIUrl":null,"url":null,"abstract":"Superconducting materials integration is one of the emerging subjects for quantum applications. This paper proposes an integration scheme based on superconducting layer etching. A material selection is proposed for interconnections including metal and dielectric. Then, a focus is realised on TaN layers as a potential technological choice. The deposition process window is explored in term of N2 flow and thickness leading to a Tc up to 2 K for 40 nm of TaN.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC/MAM57687.2023.10154766","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Superconducting materials integration is one of the emerging subjects for quantum applications. This paper proposes an integration scheme based on superconducting layer etching. A material selection is proposed for interconnections including metal and dielectric. Then, a focus is realised on TaN layers as a potential technological choice. The deposition process window is explored in term of N2 flow and thickness leading to a Tc up to 2 K for 40 nm of TaN.