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2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)最新文献

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Changing the Face of Phase Change Memory with Sb2Te3/TiTe2 Superlattices 用Sb2Te3/TiTe2超晶格改变相变存储器的表面
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154782
Seppe Van Dyck, Kiumars Aryana, W. Devulder, P. Hopkins, P. Geiregat, C. Detavernier
{"title":"Changing the Face of Phase Change Memory with Sb2Te3/TiTe2 Superlattices","authors":"Seppe Van Dyck, Kiumars Aryana, W. Devulder, P. Hopkins, P. Geiregat, C. Detavernier","doi":"10.1109/IITC/MAM57687.2023.10154782","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154782","url":null,"abstract":"As the research on phase change memory (PCM) gains more momentum due to a growing range of possible applications, some issues with their implementation still remain. Two of these issues, slow crystallization and energy loss due to heat diffusion, can be tackled by creating a chalcogenide superlattice. This structure consists of alternating layers of phase change material and a confinement material. To gain a deeper understanding of the effect of this structure on the PCM properties, the Sb2Te3/TiTe2 superlattice is studied as a stepping stone to other confinement materials. In situ X-ray diffraction is used to evaluate the deposition and the thermal stability of these materials. To study the heatflow in this structure, time-domain thermoreflectance (TDTR) is used. Finally, a methodology is presented to evaluate the functional effect of the superlattice using optical switching.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129645521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Annealing on Microstructure of Electroplated Copper Trenches in Back-End-Of-Line 退火对后端线中电镀铜槽组织的影响
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154658
P. Singh, Maik Müller, K. Machani, D. Breuer, M. Hecker, K. Meier, F. Kuechenmeister, M. Wieland, K. Bock
{"title":"Influence of Annealing on Microstructure of Electroplated Copper Trenches in Back-End-Of-Line","authors":"P. Singh, Maik Müller, K. Machani, D. Breuer, M. Hecker, K. Meier, F. Kuechenmeister, M. Wieland, K. Bock","doi":"10.1109/IITC/MAM57687.2023.10154658","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154658","url":null,"abstract":"Copper is widely used as an interconnect material in Back-End-of-Line (BEOL) because it has high thermal conductivity and good electromigration failure resistance. However, RF applications require a larger number of ultra-thick copper metals combined with a high metal density. Due to high CTE mismatch of the copper interconnects to silicon a high wafer bow is induced during the BEOL process steps. A main contribution for the high wafer bow is the stress induced in the wafer due to annealing process steps at elevated temperature. The current study focuses on the effect of line width and annealing temperatures on stress relaxation and microstructural evolution due to aging for one month. In addition, the effect of microstructural change is studied with the time dependent wafer bow measurement showing stress relaxation over time.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123094772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Area-Selective Atomic Layer Deposition of Ruthenium Thin Films by Chemo-Selective Adsorption of Short Alkylating Agents 化学选择性吸附短烷基化剂制备钌薄膜的面积选择性原子层沉积
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154801
Jeong‐Min Lee, Woo‐Hee Kim
{"title":"Area-Selective Atomic Layer Deposition of Ruthenium Thin Films by Chemo-Selective Adsorption of Short Alkylating Agents","authors":"Jeong‐Min Lee, Woo‐Hee Kim","doi":"10.1109/IITC/MAM57687.2023.10154801","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154801","url":null,"abstract":"As advanced semiconductor devices went into the extremely narrow dimensions, ruthenium has received great deal of attention for next-generation gate electrodes and metal interconnects. Accordingly, area-selective atomic layer deposition (AS-ALD) of Ru films is essentially required. In this work, we report effects of surface modification treated with vapor dosing of (N,N-diethylamino)trimethylsilane (DEATMS) as small alkylating agents on technologically important substrates of Si, SiO2, SiN, TiN, and W against Ru ALD. Through enhanced adsorption of DEATMS with discrete feeding method (DFM), significant growth retardation against Ru ALD was selectively found on SiO2, SiN, and TiN in contrast to Si-H and W.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132963243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of local areas of high aspect ratio silicon structures using metal-assisted chemical etching 利用金属辅助化学蚀刻技术制造高纵横比硅结构的局部区域
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154648
M. Franz, Romy Junghans, S. Schulz
{"title":"Fabrication of local areas of high aspect ratio silicon structures using metal-assisted chemical etching","authors":"M. Franz, Romy Junghans, S. Schulz","doi":"10.1109/IITC/MAM57687.2023.10154648","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154648","url":null,"abstract":"Within this work, we present the successful integration of the metal assisted chemical etching into a wafer fabrication regime. We created local areas, which contains 3D silicon structures with a high aspect ratio by a bottom-up approach. The catalytic wet etching process involved gold nano-particles with a median diameter of 7.8 nm to etch silicon at the metal silicon interface solely. This resulted in 0.9 μm long vertical silicon rods. This gives a platform for a low-cost fabrication of devices with integrated 3D structures.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"495 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116171107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electromigration-induced local dewetting in Cu films 电迁移诱导Cu膜局部脱湿
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154761
Yaqian Zhang, J. Mo, Z. Cui, S. Vollebregt, Guoqi Zhang
{"title":"Electromigration-induced local dewetting in Cu films","authors":"Yaqian Zhang, J. Mo, Z. Cui, S. Vollebregt, Guoqi Zhang","doi":"10.1109/IITC/MAM57687.2023.10154761","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154761","url":null,"abstract":"The continuous downscaling of microelectronics has introduced many reliability issues on interconnect. Electromigration and dewetting are major reliability concerns in high-temperature micro- and nanoscale devices. In this paper, the local dewetting of copper thin film during the electromigration test was first found and investigated. When the high current was applied, the dewetted copper forming around the edge was observed at the cathode of the conductor. Furthermore, the effect of temperature and conductor size on local dewetting was investigated. Our proposed mechanism for local dewetting is in good agreement with experimental findings.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"202 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116172591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Solution-Processable Molecular Oxides for Integrated Memories 用于集成存储器的溶液可处理分子氧化物
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154863
K. Monakhov, M. Moors, Eric Vogelsberg, Jonas Lorenz, J. Warneke, Fangshun Yang
{"title":"Solution-Processable Molecular Oxides for Integrated Memories","authors":"K. Monakhov, M. Moors, Eric Vogelsberg, Jonas Lorenz, J. Warneke, Fangshun Yang","doi":"10.1109/IITC/MAM57687.2023.10154863","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154863","url":null,"abstract":"The future of semiconductor electronics is driven by the ramp-up of low-power Complementary Metal Oxide Semiconductor (CMOS) memory devices that are scalable down to a few nanometers and ensure high storage capacity, high speed, and good data reliability. On sub-10 nm scales, however, the established computer memories increasingly face their technical and performance limits. This is largely due to the chemical and physical constraints that come with electronic solid-state oxide materials as active switching components. Our research group aims to address this challenge by creating electrically accessible multi-level memories based on solution-processable molecular metal oxides (so-called polyoxometalates, POMs), which can result in multi-bit heterostructures with a virtually unlimited number of logic states exerted by chemically programmable POMs.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116289781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Second Generation of Integrated Stack Capacitor (ISC) for Power Integrity Improvement 改进电源完整性的第二代集成堆叠电容器(ISC)
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154813
Won Ji Park, J. Oh, Shaofeng Ding, Woo Seong Jang, Hyung Won Kim, Young Bin Hyun, Tae Kyun Kim, Seung Ki Nam, Jung Il Son, Seong Wook Moon, Jeonghoon Ahn, J. Ku, Sunoo Kim
{"title":"The Second Generation of Integrated Stack Capacitor (ISC) for Power Integrity Improvement","authors":"Won Ji Park, J. Oh, Shaofeng Ding, Woo Seong Jang, Hyung Won Kim, Young Bin Hyun, Tae Kyun Kim, Seung Ki Nam, Jung Il Son, Seong Wook Moon, Jeonghoon Ahn, J. Ku, Sunoo Kim","doi":"10.1109/IITC/MAM57687.2023.10154813","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154813","url":null,"abstract":"Capacitors are the one of the key parts in a wide variety of electronic applications, such as radio-frequency (RF) and mixed-signal integrated circuits (ICs), to achieve high performance. In this paper, the 2nd generation of integrated stack capacitor (ISC GEN-2) was developed as a decoupling capacitor and characterized by using a simulation, capacitance (Ci), leakage current and WLR (Wafer Level Reliability) results. The capacitance of ISC GEN-2 is above 1,000 fF/um2 and approximately 3 times higher than the 1st generation of ISC (ISC GEN-1). With an improved capacitance on ISC GEN-2, it showed lower voltage noise, ~0.66x, compared to LICC (Low Inductance Chip Capacitor) at a given circuit simulation. The WLR results showed to meet the desired requirements.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114608171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selective ALD Mo Deposition in 10nm Contacts 10nm触点选择性ALD Mo沉积
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154783
M. H. van der Veen, J. Maes, O. Pedreira, C. Zhu, D. Tierno, S. Datta, N. Jourdan, S. Decoster, C. Wu, M. Mousa, Y. Byun, H. Struyf, S. Park, Z. Tokei
{"title":"Selective ALD Mo Deposition in 10nm Contacts","authors":"M. H. van der Veen, J. Maes, O. Pedreira, C. Zhu, D. Tierno, S. Datta, N. Jourdan, S. Decoster, C. Wu, M. Mousa, Y. Byun, H. Struyf, S. Park, Z. Tokei","doi":"10.1109/IITC/MAM57687.2023.10154783","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154783","url":null,"abstract":"Selective atomic layer deposition (ALD) of Mo is explored to fill 10nm contacts in a 2 nm node test vehicle. The ALD Mo deposition is highly selective towards the dielectrics (SiO2, low-k OSG3.0, SiCN), and deposits selectively on the bottom Ru routing contact layer. Barrierless Mo via fill levels in the range of 10-20nm are obtained without detecting Mo in the dielectrics of the stack. The resistance of the Mo in MP24 vias with aspect ratio (AR) 2 is ~ 50Ω. Further resistance reduction is expected upon removing the top interfacial oxide introduced by an air break during metallization. The reliability shows that stress induced voiding is not observed for the Mo-Cu metallized system. Additionally, the via electromigration failures are only observed in the connecting Cu top trench, leaving the robust ALD Mo vias intact.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116060347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reaction-diffusion model for hydrogen release from PECVD silicon nitride PECVD氮化硅氢释放的反应扩散模型
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154702
Prafullkrishna Dani, Leo Rizzi, J. Franz, J. Knoch
{"title":"Reaction-diffusion model for hydrogen release from PECVD silicon nitride","authors":"Prafullkrishna Dani, Leo Rizzi, J. Franz, J. Knoch","doi":"10.1109/IITC/MAM57687.2023.10154702","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154702","url":null,"abstract":"In this work, release of hydrogen from PECVD silicon nitride films of different thicknesses was studied using thermal desorption spectroscopy. A reaction-diffusion model is presented to describe the hydrogen release phenomenon. Change in bonded and total concentration of hydrogen in the film after rapid thermal annealing was characterized using inert gas fusion analysis and Fourier transformed infrared spectroscopy. The model was validated against experimental results.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129300061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reverse Templating Effects of Low-Resistivity Ru ALD on Sputtered Ru 低阻Ru ALD对溅射Ru的反模板效应
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154711
V. Wang, Cheng-Hsuan Kuo, R. Kanjolia, M. Moinpour, J. Woodruff, H. Simka, A. Kummel
{"title":"Reverse Templating Effects of Low-Resistivity Ru ALD on Sputtered Ru","authors":"V. Wang, Cheng-Hsuan Kuo, R. Kanjolia, M. Moinpour, J. Woodruff, H. Simka, A. Kummel","doi":"10.1109/IITC/MAM57687.2023.10154711","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154711","url":null,"abstract":"Ruthenium is a promising candidate to replace Cu as an interconnect metal due to its low resistivity in narrow vias and resistance to electromigration. In previous work, a Ru Atomic Layer Deposition (ALD) process using Ru(CpEt)2 and O2 was developed to produce films with bulk-like resistivities. However, the ALD exhibits poor initial nucleation with variable initial nucleation delay causing thickness control to be difficult and high surface roughness. In this work, the effects of depositing low resistivity ALD Ru on 2 and 10-nm sputtered Ru films are investigated to eliminate the initial poor nucleation while retaining low overall film resistivity.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123201394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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