Solution-Processable Molecular Oxides for Integrated Memories

Abstract

The future of semiconductor electronics is driven by the ramp-up of low-power Complementary Metal Oxide Semiconductor (CMOS) memory devices that are scalable down to a few nanometers and ensure high storage capacity, high speed, and good data reliability. On sub-10 nm scales, however, the established computer memories increasingly face their technical and performance limits. This is largely due to the chemical and physical constraints that come with electronic solid-state oxide materials as active switching components. Our research group aims to address this challenge by creating electrically accessible multi-level memories based on solution-processable molecular metal oxides (so-called polyoxometalates, POMs), which can result in multi-bit heterostructures with a virtually unlimited number of logic states exerted by chemically programmable POMs.