PECVD氮化硅氢释放的反应扩散模型

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI:10.1109/IITC/MAM57687.2023.10154702

Prafullkrishna Dani, Leo Rizzi, J. Franz, J. Knoch

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引用次数: 0

摘要

本文采用热解吸光谱法研究了不同厚度的PECVD氮化硅膜中氢气的释放。提出了一个反应扩散模型来描述氢释放现象。利用惰性气体熔合分析和傅里叶变换红外光谱对快速退火后膜中氢键和氢总浓度的变化进行了表征。模型与实验结果进行了对比验证。

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Reaction-diffusion model for hydrogen release from PECVD silicon nitride

In this work, release of hydrogen from PECVD silicon nitride films of different thicknesses was studied using thermal desorption spectroscopy. A reaction-diffusion model is presented to describe the hydrogen release phenomenon. Change in bonded and total concentration of hydrogen in the film after rapid thermal annealing was characterized using inert gas fusion analysis and Fourier transformed infrared spectroscopy. The model was validated against experimental results.

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来源期刊

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)

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