{"title":"利用金属辅助化学蚀刻技术制造高纵横比硅结构的局部区域","authors":"M. Franz, Romy Junghans, S. Schulz","doi":"10.1109/IITC/MAM57687.2023.10154648","DOIUrl":null,"url":null,"abstract":"Within this work, we present the successful integration of the metal assisted chemical etching into a wafer fabrication regime. We created local areas, which contains 3D silicon structures with a high aspect ratio by a bottom-up approach. The catalytic wet etching process involved gold nano-particles with a median diameter of 7.8 nm to etch silicon at the metal silicon interface solely. This resulted in 0.9 μm long vertical silicon rods. This gives a platform for a low-cost fabrication of devices with integrated 3D structures.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"495 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication of local areas of high aspect ratio silicon structures using metal-assisted chemical etching\",\"authors\":\"M. Franz, Romy Junghans, S. Schulz\",\"doi\":\"10.1109/IITC/MAM57687.2023.10154648\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Within this work, we present the successful integration of the metal assisted chemical etching into a wafer fabrication regime. We created local areas, which contains 3D silicon structures with a high aspect ratio by a bottom-up approach. The catalytic wet etching process involved gold nano-particles with a median diameter of 7.8 nm to etch silicon at the metal silicon interface solely. This resulted in 0.9 μm long vertical silicon rods. This gives a platform for a low-cost fabrication of devices with integrated 3D structures.\",\"PeriodicalId\":241835,\"journal\":{\"name\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"volume\":\"495 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC/MAM57687.2023.10154648\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC/MAM57687.2023.10154648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication of local areas of high aspect ratio silicon structures using metal-assisted chemical etching
Within this work, we present the successful integration of the metal assisted chemical etching into a wafer fabrication regime. We created local areas, which contains 3D silicon structures with a high aspect ratio by a bottom-up approach. The catalytic wet etching process involved gold nano-particles with a median diameter of 7.8 nm to etch silicon at the metal silicon interface solely. This resulted in 0.9 μm long vertical silicon rods. This gives a platform for a low-cost fabrication of devices with integrated 3D structures.