Reaction-diffusion model for hydrogen release from PECVD silicon nitride

Abstract

In this work, release of hydrogen from PECVD silicon nitride films of different thicknesses was studied using thermal desorption spectroscopy. A reaction-diffusion model is presented to describe the hydrogen release phenomenon. Change in bonded and total concentration of hydrogen in the film after rapid thermal annealing was characterized using inert gas fusion analysis and Fourier transformed infrared spectroscopy. The model was validated against experimental results.