Fabrication of local areas of high aspect ratio silicon structures using metal-assisted chemical etching

M. Franz, Romy Junghans, S. Schulz
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Abstract

Within this work, we present the successful integration of the metal assisted chemical etching into a wafer fabrication regime. We created local areas, which contains 3D silicon structures with a high aspect ratio by a bottom-up approach. The catalytic wet etching process involved gold nano-particles with a median diameter of 7.8 nm to etch silicon at the metal silicon interface solely. This resulted in 0.9 μm long vertical silicon rods. This gives a platform for a low-cost fabrication of devices with integrated 3D structures.
利用金属辅助化学蚀刻技术制造高纵横比硅结构的局部区域
在这项工作中,我们成功地将金属辅助化学蚀刻集成到晶圆制造体系中。我们通过自下而上的方法创建了局部区域,其中包含具有高纵横比的3D硅结构。采用中位直径为7.8 nm的金纳米颗粒在金属硅界面上单独蚀刻硅。这产生了0.9 μm长的垂直硅棒。这为集成3D结构的低成本设备制造提供了一个平台。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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