Changing the Face of Phase Change Memory with Sb2Te3/TiTe2 Superlattices

Seppe Van Dyck, Kiumars Aryana, W. Devulder, P. Hopkins, P. Geiregat, C. Detavernier
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Abstract

As the research on phase change memory (PCM) gains more momentum due to a growing range of possible applications, some issues with their implementation still remain. Two of these issues, slow crystallization and energy loss due to heat diffusion, can be tackled by creating a chalcogenide superlattice. This structure consists of alternating layers of phase change material and a confinement material. To gain a deeper understanding of the effect of this structure on the PCM properties, the Sb2Te3/TiTe2 superlattice is studied as a stepping stone to other confinement materials. In situ X-ray diffraction is used to evaluate the deposition and the thermal stability of these materials. To study the heatflow in this structure, time-domain thermoreflectance (TDTR) is used. Finally, a methodology is presented to evaluate the functional effect of the superlattice using optical switching.
用Sb2Te3/TiTe2超晶格改变相变存储器的表面
随着相变存储器(PCM)的应用范围越来越广,其研究势头越来越大,但其实现仍存在一些问题。其中两个问题,缓慢的结晶和由于热扩散造成的能量损失,可以通过创建硫系超晶格来解决。该结构由相变材料和约束材料交替层组成。为了更深入地了解这种结构对PCM性能的影响,研究了Sb2Te3/TiTe2超晶格作为其他约束材料的垫脚石。用原位x射线衍射评价了这些材料的沉积和热稳定性。为了研究这种结构中的热流,使用了时域热反射(TDTR)。最后,提出了一种利用光开关评价超晶格泛函效应的方法。
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