粒子射线追踪法的薄膜生长:一种改变表面形貌的气相沉积过程的模拟方法

Erik E. Lorenz, Joshua Gehre, L. Jäckel, J. Schuster
{"title":"粒子射线追踪法的薄膜生长:一种改变表面形貌的气相沉积过程的模拟方法","authors":"Erik E. Lorenz, Joshua Gehre, L. Jäckel, J. Schuster","doi":"10.1109/IITC/MAM57687.2023.10154705","DOIUrl":null,"url":null,"abstract":"We present a numerical method for the simulation of vapor deposition processes in complex 3D microstructures, which couples a raytracing-based particle Monte Carlo transport model with Level Set methods for thin film growth. Through the incorporation of different particle-surface interaction models, our method models a wide range of deposition techniques, including Physical Vapor Deposition (PVD), Chemical Vapor Deposition and Atomic Layer Deposition (ALD). We demonstrate our method on trench filling with a two-step copper resputter PVD process and a model ALD process.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Film Growth from Particle Raytracing: A Simulation Method for Vapor Deposition Processes with Changing Surface Topographies\",\"authors\":\"Erik E. Lorenz, Joshua Gehre, L. Jäckel, J. Schuster\",\"doi\":\"10.1109/IITC/MAM57687.2023.10154705\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a numerical method for the simulation of vapor deposition processes in complex 3D microstructures, which couples a raytracing-based particle Monte Carlo transport model with Level Set methods for thin film growth. Through the incorporation of different particle-surface interaction models, our method models a wide range of deposition techniques, including Physical Vapor Deposition (PVD), Chemical Vapor Deposition and Atomic Layer Deposition (ALD). We demonstrate our method on trench filling with a two-step copper resputter PVD process and a model ALD process.\",\"PeriodicalId\":241835,\"journal\":{\"name\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC/MAM57687.2023.10154705\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC/MAM57687.2023.10154705","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们提出了一种模拟复杂三维微结构中气相沉积过程的数值方法,该方法将基于射线追踪的粒子蒙特卡罗输运模型与薄膜生长的水平集方法相结合。通过结合不同的粒子-表面相互作用模型,我们的方法模拟了广泛的沉积技术,包括物理气相沉积(PVD),化学气相沉积和原子层沉积(ALD)。我们用两步铜溅射PVD工艺和模型ALD工艺来演示我们的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Film Growth from Particle Raytracing: A Simulation Method for Vapor Deposition Processes with Changing Surface Topographies
We present a numerical method for the simulation of vapor deposition processes in complex 3D microstructures, which couples a raytracing-based particle Monte Carlo transport model with Level Set methods for thin film growth. Through the incorporation of different particle-surface interaction models, our method models a wide range of deposition techniques, including Physical Vapor Deposition (PVD), Chemical Vapor Deposition and Atomic Layer Deposition (ALD). We demonstrate our method on trench filling with a two-step copper resputter PVD process and a model ALD process.
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