无横截面抽样的三维薄膜计量

A. Philip, M. Utriainen, T. Werner, Pasi Hyttinen, J. Saarilahti, Jussi Kinnunen, Feng Gao
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引用次数: 0

摘要

高纵横比衬底的保形涂层是下一代3D半导体器件发展的关键因素。采用垂直高纵横比基片进行一致性研究的传统方法通常受到繁琐的分析技术要求的限制。在这里,我们提出了一个创新的解决方案,通过引入横向高纵横比基板;PillarHall®LHAR4硅测试芯片以及简单、快速和准确的计量工具。目前的工作还报告了将这些芯片集成在300毫米晶圆上的非有机粘合剂方法,旨在实现晶圆级加工。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
3D Thin Film Metrology without Cross-Sectional Sampling
Conformal coating in high aspect ratio substrates is a crucial factor in the development of next generation 3D semiconductor devices. Conventional approaches of employing vertical high aspect ratio substrates for conformality studies have usually been restricted by the tedious analytical technique requirements. Here, we present an innovative solution for this problem by introducing lateral high aspect ratio substrates; PillarHall® LHAR4 silicon test chips together with simple, fast and accurate metrology tools. The current work also reports the non-organic adhesive approach for the integration of these chips in 300 mm wafer aiming at wafer level processing.
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