低温热气相沉积在镍薄膜上形成石墨烯帽

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI:10.1109/IITC/MAM57687.2023.10154774

Yumehito Tenmyo, Reno Hasumi, K. Ueno

{"title":"低温热气相沉积在镍薄膜上形成石墨烯帽","authors":"Yumehito Tenmyo, Reno Hasumi, K. Ueno","doi":"10.1109/IITC/MAM57687.2023.10154774","DOIUrl":null,"url":null,"abstract":"A graphene cap was deposited on a 30 nm Ni thin film at a low temperature of 400°C by CVD matching the interconnect process temperature. As a result, oxidation of Ni was inhibited, and a low resistivity of 12.5 μΩcm was obtained with a film thickness of 30nm. Graphene-capped Ni may have a low-resistance in fine line width.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Graphene Cap Formation on Nickel Thin Films by Thermal CVD at Low Temperature\",\"authors\":\"Yumehito Tenmyo, Reno Hasumi, K. Ueno\",\"doi\":\"10.1109/IITC/MAM57687.2023.10154774\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A graphene cap was deposited on a 30 nm Ni thin film at a low temperature of 400°C by CVD matching the interconnect process temperature. As a result, oxidation of Ni was inhibited, and a low resistivity of 12.5 μΩcm was obtained with a film thickness of 30nm. Graphene-capped Ni may have a low-resistance in fine line width.\",\"PeriodicalId\":241835,\"journal\":{\"name\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC/MAM57687.2023.10154774\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC/MAM57687.2023.10154774","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

通过CVD匹配互连工艺温度，在400℃的低温下在30 nm Ni薄膜上沉积了石墨烯帽。结果抑制了Ni的氧化，薄膜厚度为30nm，电阻率为12.5 μΩcm。石墨烯覆盖的Ni在细线宽度上可能具有低电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Graphene Cap Formation on Nickel Thin Films by Thermal CVD at Low Temperature

A graphene cap was deposited on a 30 nm Ni thin film at a low temperature of 400°C by CVD matching the interconnect process temperature. As a result, oxidation of Ni was inhibited, and a low resistivity of 12.5 μΩcm was obtained with a film thickness of 30nm. Graphene-capped Ni may have a low-resistance in fine line width.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)

自引率

0.00%

发文量