孔径小于20nm的单孔无阻挡填充钌的预处理研究

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI:10.1109/IITC/MAM57687.2023.10154739

R. Yonezawa, K. Yu, H. Aizawa, H. Suzuki, C. Wajda, G. Leusink

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引用次数: 0

摘要

小过孔的填充是一项挑战。通孔中的空隙将导致高通孔电阻。用深蚀序列填充Ru有助于减少孔隙的形成;然而，它不是生产力友好型的。我们报道了使用表面处理在直径小于20nm的孔中无空洞的Ru填充。引入了一种新的表面处理方法来控制Ru在SiO2和底部金属上的沉积速率。

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Pre-treatment study for barrier-less Ruthenium filling into single damascene via of sub 20nm hole size

Ru filling in small vias is challenging. Voids in the via will cause high via resistance. Ru filling with dep-etch sequence helps to minimize void formation; however, it is not productivity friendly. We report Ru fill without void in sub 20nm diameter vias using a surface treatment. New surface treatment has been introduced as a treatment to manage the Ru deposition rate on SiO2 and the bottom metal.

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来源期刊

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)

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