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2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)最新文献

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Impact of pre-amorphization implantation schemes using beam line or plasma ion implantation on Ni(Pt)Si/Si specific contact resistivities 光束线或等离子体离子注入预非晶化方案对Ni(Pt)Si/Si比接触电阻率的影响
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154815
S. Guillemin, L. Lachal, F. Torregrosa, G. Romano, F. Nemouchi, P. Rodriguez, F. Mazen
{"title":"Impact of pre-amorphization implantation schemes using beam line or plasma ion implantation on Ni(Pt)Si/Si specific contact resistivities","authors":"S. Guillemin, L. Lachal, F. Torregrosa, G. Romano, F. Nemouchi, P. Rodriguez, F. Mazen","doi":"10.1109/IITC/MAM57687.2023.10154815","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154815","url":null,"abstract":"The specific contact resistivity of Ni(Pt)Si silicide layers on Si active areas has been assessed using the transfer length method (TLM) for a broad range of pre-amorphization implantation conditions, including various implanted species and implantation energies as well as two different implantation processes (beam line ion implantation (BLII) and plasma immersion ion implantation (PIII)). Using BLII, the interest of dopant segregation for Schottky barrier height engineering seems to be limited by the difficulty to localize an important quantity of dopants at the Si surface. Using PIII, this difficulty is overcome and a reduction of the specific contact resistivity is obtained when using CF4-based implantation processes.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121875150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of 3-layer stacked global shutter CMOS image sensor with pixel pitch Cu-to-Cu interconnection and high-capacity capacitors 具有像素间距Cu-to-Cu互连和大容量电容的3层堆叠全局快门CMOS图像传感器的开发
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154780
Seungjae Oh, Doowon Kwon, Haejung Lee, Kyungtae Lim, Taeyeong Kim, Jae-Hyung Park, Kyuha Lee, Hyoju Kim, Yoonjay Han, Jae-Kyu Lee, Changrok Moon, J. Song
{"title":"Development of 3-layer stacked global shutter CMOS image sensor with pixel pitch Cu-to-Cu interconnection and high-capacity capacitors","authors":"Seungjae Oh, Doowon Kwon, Haejung Lee, Kyungtae Lim, Taeyeong Kim, Jae-Hyung Park, Kyuha Lee, Hyoju Kim, Yoonjay Han, Jae-Kyu Lee, Changrok Moon, J. Song","doi":"10.1109/IITC/MAM57687.2023.10154780","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154780","url":null,"abstract":"We have successfully developed two kinds of novel 3-layer stacked backside-illuminated (BSI) voltage-domain global shutter (GS) CMOS image sensors (CIS) with consecutive void-free hybrid bonding processes. A new 3-layer stacked GS CIS contains the separate high-capacity capacitors on the middle wafer which are connected to pixel transistors via pixel-pitch Cu-to-Cu hybrid bonding, followed by another Cu-to-Cu hybrid bonding that connects middle capacitor wafer to bottom logic wafer. Another type of sensor architecture contains thinned Si layer in middle wafer that enables 3-dimensional (3D) integration of transistors for GS operation. Our proposed 3-layer stacking integrations provide a pathway to pixel-level integration of ultrahigh-capacity capacitors for further shrink of GS CIS.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124811929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Area-Selective Atomic Layer Deposition of Ruthenium Thin Films Using Aldehyde Inhibitors 利用醛类抑制剂制备钌薄膜的面积选择性原子层沉积
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154817
Han Park, J. Oh, Jeong‐Min Lee, Woo‐Hee Kim
{"title":"Area-Selective Atomic Layer Deposition of Ruthenium Thin Films Using Aldehyde Inhibitors","authors":"Han Park, J. Oh, Jeong‐Min Lee, Woo‐Hee Kim","doi":"10.1109/IITC/MAM57687.2023.10154817","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154817","url":null,"abstract":"Recently, area selective atomic layer deposition (AS-ALD) has attached attention for alternative approach of device downscaling in 3D semiconductor fabrication. We reported Ru AS-ALD through vapor-phase adsorption of aldehyde self-assembled monolayers (SAMs). In this study, we investigate Ru ALD process and explored inhibitory efficacy of aldehyde inhibitors on various substrates, including nitride, oxide, and metal surfaces. As a results of chemo-selective adsorption of aldehyde molecules, nitride substrates were selectively passivated, thereby leading to growth retardation of Ru ALD. Finally, through surface functionalization by using aldehyde inhibitors, we achieved Ru AS-ALD on patterned TiN/SiO2 surfaces.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127958197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Galvanic displacement deposition of Ag using citric acid for Cu-to-Cu hybrid bonding 用柠檬酸电驱沉积银进行cu - cu杂化键合
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154719
Youjung Kim, S. Yoon, H. Han, Jin-Kyo Seo, Jung-Joon Park, B. Yoo
{"title":"Galvanic displacement deposition of Ag using citric acid for Cu-to-Cu hybrid bonding","authors":"Youjung Kim, S. Yoon, H. Han, Jin-Kyo Seo, Jung-Joon Park, B. Yoo","doi":"10.1109/IITC/MAM57687.2023.10154719","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154719","url":null,"abstract":"This study reports Ag deposition for hybrid bonding using galvanic displacement deposition. The galvanic displacement method enables selective deposition only on Cu without any additional process. To uniform Ag layer, citric acid was added. Citric acid suppresses the Cu dissolution and stabilize the Cu surface. The morphologies of Ag layer were observed by scanning electron microscopy (SEM). The deposited Ag atoms has a property of interdiffusion with Cu during bonding process because of the difference of activation energy. Depth-profiling X-ray photoelectron spectroscopy (XPS) shows the interdiffusion between Ag and Cu, and the bonding properties improve with Ag layer.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126311539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Program File 程序文件
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/iitc/mam57687.2023.10154832
{"title":"Program File","authors":"","doi":"10.1109/iitc/mam57687.2023.10154832","DOIUrl":"https://doi.org/10.1109/iitc/mam57687.2023.10154832","url":null,"abstract":"","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127114352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advanced BEOL process integration for logic technology nodes 先进的BEOL流程集成逻辑技术节点
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154737
Chanho Park, Minkwon Choi, Chang Dong Kim, Bonhyeok Koo, O. Y. Kweon, Jinhyeung Park, JuYoung Jung, Yunki Choi, Kyoung-Woo Lee, Jeonghoon Ahn, J. Ku
{"title":"Advanced BEOL process integration for logic technology nodes","authors":"Chanho Park, Minkwon Choi, Chang Dong Kim, Bonhyeok Koo, O. Y. Kweon, Jinhyeung Park, JuYoung Jung, Yunki Choi, Kyoung-Woo Lee, Jeonghoon Ahn, J. Ku","doi":"10.1109/IITC/MAM57687.2023.10154737","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154737","url":null,"abstract":"This paper describes two advanced technologies recently adopted in back-end-of-line (BEOL) process for our logic products: self-aligned-universal-patterning (SAUP) and sacrificial oxide layer (SOL). Advantages of SAUP include improved extreme ultraviolet (EUV) throughput, reduced pinch-off type patterning defects, improved reliability, and lower power rail resistance. SOL is found to be an effective means to avoid dielectric damage and resulting RC degradation occurred by multiple etch processes.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122305008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
7 Years after the A10 Processor, the Era of Heterogeneous Integration A10处理器7年后，异构集成时代
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154661
Woong-Sun Lee
{"title":"7 Years after the A10 Processor, the Era of Heterogeneous Integration","authors":"Woong-Sun Lee","doi":"10.1109/IITC/MAM57687.2023.10154661","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154661","url":null,"abstract":"After the appearance of Apple’s A10 processor in 2015, advanced packaging technology based on the 12 inch wafer process has created a new market. Various new advanced packaging technologies have been developed, and many heterogeneous integration products have been appeared, becoming mainstream of the development of semiconductor technology. SK hynix has developed its own technology and is ahead of the market as an advanced packaging product that applies TSV(Through Silicon Via) such as HBM(High Bandwidth Memory). This paper introduced wafer molding, chip to wafer stacking, and processes that apply machine learning, which are unique mass production technologies of SK hynix.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128044652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An industrially compatible process for the fabrication of superconducting monocrystalline Si films 一种工业上兼容的超导单晶硅薄膜制造工艺
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154877
P. Dumas, M. Opprecht, S. Kerdilès, F. Lefloch, F. Nemouchi
{"title":"An industrially compatible process for the fabrication of superconducting monocrystalline Si films","authors":"P. Dumas, M. Opprecht, S. Kerdilès, F. Lefloch, F. Nemouchi","doi":"10.1109/IITC/MAM57687.2023.10154877","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154877","url":null,"abstract":"We report an industrially compatible process for the fabrication of superconducting monocrystalline Si films (~ 30 nm thick). Increasing the boron implant energy by only one keV enables superconductivity in monocrystalline films and makes the critical temperature increase up to 390 mK. Time-Resolved-Reflectometry appears as an adequate in-line characterization to identify the most promising process conditions.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124000231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations 取向依赖基板的碲化锑薄膜原子层沉积的原子尺度晶体相变
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154820
Sangyoon Lee, Jeongwook Seo, Inkyu Sohn, Young-Min Kang, C. Lee, W. Yang, Seung-min Chung, Hyungjun Kim
{"title":"Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations","authors":"Sangyoon Lee, Jeongwook Seo, Inkyu Sohn, Young-Min Kang, C. Lee, W. Yang, Seung-min Chung, Hyungjun Kim","doi":"10.1109/IITC/MAM57687.2023.10154820","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154820","url":null,"abstract":"Among chalcogenides for phase-change memory, Sb<inf>2</inf>Te<inf>3</inf> is attracting attention for its huge potential, along with recent demands for atomic layer deposition (ALD). We aimed to study atomic-scale thin film growth and phase transformation of ALD Sb<inf>2</inf>Te<inf>3</inf> thin films with substrate dependency. Comparatively, thin film growth trends of ALD Sb<inf>2</inf>Te<inf>3</inf> on SiO<inf>2</inf> and W substrate were studied by observing transformation of crystal structures, and trends in electrical resistivity. On SiO<inf>2</inf>, predominant amorphous phases at initial stage were observed, followed by polycrystalline island growth with randomly oriented grains. However, on crystalline W, the highly out-of-plane (00l) orientations and layer-by-layer growth was found.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121396831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advanced Electron Energy Loss Spectroscopy investigation of microelectronic devices 微电子器件的先进电子能量损耗谱研究
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI: 10.1109/IITC/MAM57687.2023.10154858
J. Mattei, R. Bon, B. Ayoub, S. Lhostis, L. Clément
{"title":"Advanced Electron Energy Loss Spectroscopy investigation of microelectronic devices","authors":"J. Mattei, R. Bon, B. Ayoub, S. Lhostis, L. Clément","doi":"10.1109/IITC/MAM57687.2023.10154858","DOIUrl":"https://doi.org/10.1109/IITC/MAM57687.2023.10154858","url":null,"abstract":"Nowadays, the use of transmission electron microscopy in microelectronic field enables to address accurate physical and chemical characterization or even to determine the root cause of an electrical failure. Indeed, this instrument allows to perform several types of chemical analyses owing to different spectrometers fitted with. Among these associated technics fitted to this instrument, the Electron Energy Losses spectroscopy aims to provide elemental and chemical information. Focusing on an ionization edge of specific element allows to identify its chemical environment or oxidation state. In this present work, the study aimed to reveal the oxidation state of copper at Cu/SiO2 hybrid bonding interface. EELS investigations of the fine structure clearly revealed a self-formed Cu2O barrier for the Cu/SiO2 hybrid bonding integration. Furthermore, combining the spatial resolution of TEM and the acquisition of EELS fine structure mapping, allows to precisely measure an ultrafine copper oxide layer of only a few nanometers thick.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116309788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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