一种工业上兼容的超导单晶硅薄膜制造工艺

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI:10.1109/IITC/MAM57687.2023.10154877

P. Dumas, M. Opprecht, S. Kerdilès, F. Lefloch, F. Nemouchi

{"title":"一种工业上兼容的超导单晶硅薄膜制造工艺","authors":"P. Dumas, M. Opprecht, S. Kerdilès, F. Lefloch, F. Nemouchi","doi":"10.1109/IITC/MAM57687.2023.10154877","DOIUrl":null,"url":null,"abstract":"We report an industrially compatible process for the fabrication of superconducting monocrystalline Si films (~ 30 nm thick). Increasing the boron implant energy by only one keV enables superconductivity in monocrystalline films and makes the critical temperature increase up to 390 mK. Time-Resolved-Reflectometry appears as an adequate in-line characterization to identify the most promising process conditions.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An industrially compatible process for the fabrication of superconducting monocrystalline Si films\",\"authors\":\"P. Dumas, M. Opprecht, S. Kerdilès, F. Lefloch, F. Nemouchi\",\"doi\":\"10.1109/IITC/MAM57687.2023.10154877\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report an industrially compatible process for the fabrication of superconducting monocrystalline Si films (~ 30 nm thick). Increasing the boron implant energy by only one keV enables superconductivity in monocrystalline films and makes the critical temperature increase up to 390 mK. Time-Resolved-Reflectometry appears as an adequate in-line characterization to identify the most promising process conditions.\",\"PeriodicalId\":241835,\"journal\":{\"name\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC/MAM57687.2023.10154877\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC/MAM57687.2023.10154877","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了一种工业上兼容的超导单晶硅薄膜(~ 30nm厚)的制造工艺。仅增加一个keV的硼植入能量就可以实现单晶薄膜的超导性，并使临界温度升高到390 mK。时间分辨反射法似乎是一种足够的在线表征方法，可以确定最有希望的工艺条件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An industrially compatible process for the fabrication of superconducting monocrystalline Si films

We report an industrially compatible process for the fabrication of superconducting monocrystalline Si films (~ 30 nm thick). Increasing the boron implant energy by only one keV enables superconductivity in monocrystalline films and makes the critical temperature increase up to 390 mK. Time-Resolved-Reflectometry appears as an adequate in-line characterization to identify the most promising process conditions.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)

自引率

0.00%

发文量