Advanced BEOL process integration for logic technology nodes

Chanho Park, Minkwon Choi, Chang Dong Kim, Bonhyeok Koo, O. Y. Kweon, Jinhyeung Park, JuYoung Jung, Yunki Choi, Kyoung-Woo Lee, Jeonghoon Ahn, J. Ku
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Abstract

This paper describes two advanced technologies recently adopted in back-end-of-line (BEOL) process for our logic products: self-aligned-universal-patterning (SAUP) and sacrificial oxide layer (SOL). Advantages of SAUP include improved extreme ultraviolet (EUV) throughput, reduced pinch-off type patterning defects, improved reliability, and lower power rail resistance. SOL is found to be an effective means to avoid dielectric damage and resulting RC degradation occurred by multiple etch processes.
先进的BEOL流程集成逻辑技术节点
本文介绍了近年来在我们的逻辑产品的后端(BEOL)工艺中采用的两种先进技术:自对准通用图纹(SAUP)和牺牲氧化层(SOL)。SAUP的优点包括提高极紫外(EUV)吞吐量、减少掐断型图型缺陷、提高可靠性和降低电源轨电阻。溶胶是一种有效的方法,可以避免多次蚀刻过程造成的介质损伤和RC退化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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