Advanced Electron Energy Loss Spectroscopy investigation of microelectronic devices

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI:10.1109/IITC/MAM57687.2023.10154858

J. Mattei, R. Bon, B. Ayoub, S. Lhostis, L. Clément

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Abstract

Nowadays, the use of transmission electron microscopy in microelectronic field enables to address accurate physical and chemical characterization or even to determine the root cause of an electrical failure. Indeed, this instrument allows to perform several types of chemical analyses owing to different spectrometers fitted with. Among these associated technics fitted to this instrument, the Electron Energy Losses spectroscopy aims to provide elemental and chemical information. Focusing on an ionization edge of specific element allows to identify its chemical environment or oxidation state. In this present work, the study aimed to reveal the oxidation state of copper at Cu/SiO2 hybrid bonding interface. EELS investigations of the fine structure clearly revealed a self-formed Cu2O barrier for the Cu/SiO2 hybrid bonding integration. Furthermore, combining the spatial resolution of TEM and the acquisition of EELS fine structure mapping, allows to precisely measure an ultrafine copper oxide layer of only a few nanometers thick.

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微电子器件的先进电子能量损耗谱研究

如今，在微电子领域使用透射电子显微镜能够解决准确的物理和化学特性，甚至确定电气故障的根本原因。实际上，由于配备了不同的光谱仪，该仪器可以进行几种类型的化学分析。在适用于该仪器的相关技术中，电子能量损失光谱旨在提供元素和化学信息。关注特定元素的电离边缘可以识别其化学环境或氧化状态。本研究旨在揭示铜在Cu/SiO2杂化键合界面上的氧化态。EELS精细结构研究清楚地揭示了Cu/SiO2杂化键合集成中自形成的Cu2O势垒。此外，结合TEM的空间分辨率和EELS精细结构映射的获取，可以精确测量只有几纳米厚的超细氧化铜层。

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来源期刊

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)

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