Impact of pre-amorphization implantation schemes using beam line or plasma ion implantation on Ni(Pt)Si/Si specific contact resistivities

Abstract

The specific contact resistivity of Ni(Pt)Si silicide layers on Si active areas has been assessed using the transfer length method (TLM) for a broad range of pre-amorphization implantation conditions, including various implanted species and implantation energies as well as two different implantation processes (beam line ion implantation (BLII) and plasma immersion ion implantation (PIII)). Using BLII, the interest of dopant segregation for Schottky barrier height engineering seems to be limited by the difficulty to localize an important quantity of dopants at the Si surface. Using PIII, this difficulty is overcome and a reduction of the specific contact resistivity is obtained when using CF4-based implantation processes.