取向依赖基板的碲化锑薄膜原子层沉积的原子尺度晶体相变

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI:10.1109/IITC/MAM57687.2023.10154820

Sangyoon Lee, Jeongwook Seo, Inkyu Sohn, Young-Min Kang, C. Lee, W. Yang, Seung-min Chung, Hyungjun Kim

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引用次数: 0

摘要

在用于相变存储器的硫族化合物中，Sb2Te3因其巨大的潜力以及近年来对原子层沉积(ALD)的需求而备受关注。我们的目的是研究具有衬底依赖性的ALD Sb2Te3薄膜的原子尺度生长和相变。通过观察晶体结构转变和电阻率变化趋势，研究了ALD Sb2Te3在SiO2和W衬底上的薄膜生长趋势。在SiO2上，初始阶段以非晶态为主，随后以随机取向的多晶岛状生长。然而，在W晶体上，发现了高度的面外(00l)取向和逐层生长。

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Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations

Among chalcogenides for phase-change memory, Sb2Te3 is attracting attention for its huge potential, along with recent demands for atomic layer deposition (ALD). We aimed to study atomic-scale thin film growth and phase transformation of ALD Sb2Te3 thin films with substrate dependency. Comparatively, thin film growth trends of ALD Sb2Te3 on SiO2 and W substrate were studied by observing transformation of crystal structures, and trends in electrical resistivity. On SiO2, predominant amorphous phases at initial stage were observed, followed by polycrystalline island growth with randomly oriented grains. However, on crystalline W, the highly out-of-plane (00l) orientations and layer-by-layer growth was found.

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2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)

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