Linda Jäckel, A. Zienert, Erik E. Lorenz, Max Huber, J. Schuster
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We present a multi-scale modeling strategy to investigate and optimize epitaxial growth. As example processes, we study Si and SiGe epitaxial films in various equipments. While reactor-scale and feature-scale simulation approaches are useful on themselves, only the combination of both approaches is capable of fully capturing the physical and chemical processes of epitaxial growth on structured substrates.
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