2010 IEEE International SOI Conference (SOI)最新文献

High-frequency characterization of intrinsic FinFET channel 本征FinFET通道的高频特性

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641064

H. Sakai, S. O'Uchi, T. Matsukawa, K. Endo, Y. Liu, T. Tsukada, Y. Ishikawa, T. Nakagawa, T. Sekigawa, H. Koike, K. Sakamoto, M. Masahara, H. Ishikuro

引用次数: 3

Non-linear analysis of n-type Schottky-Barrier MOSFETs n型肖特基势垒mosfet的非线性分析

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641391

J. Tinoco, C. Urban, M. Emam, S. Mantl, Q. Zhao, J. Raskin

引用次数: 0

Photonic integrated circuits in silicon-on-insulator 绝缘体上硅的光子集成电路

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641404

W. Bogaerts, S. Selvaraja, P. Dumon, P. Absil, D. van Thourhout, R. Baets

引用次数: 4

The use of high resolution haze for control of SOI surface roughness in a volume production environment. 在批量生产环境中使用高分辨率雾霾来控制SOI表面粗糙度。

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641056

R. Brun, C. Moulin, G. Bast, G. Simpson, P. Dighe

引用次数: 3

Ultra low power, harsh environment SOI-CMOS design of temperature sensor based threshold detection and wake-up IC 超低功耗，恶劣环境SOI-CMOS设计基于温度传感器的阈值检测和唤醒IC

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641369

M. Assaad, P. Gérard, L. Francis, D. Flandre

{"title":"Ultra low power, harsh environment SOI-CMOS design of temperature sensor based threshold detection and wake-up IC","authors":"M. Assaad, P. Gérard, L. Francis, D. Flandre","doi":"10.1109/SOI.2010.5641369","DOIUrl":"https://doi.org/10.1109/SOI.2010.5641369","url":null,"abstract":"An ultra-low-power temperature-sensor-based silicon-on-insulator (SOI) CMOS Integrated Circuit (IC) for harsh environment application is presented. It first detects a temperature threshold, secondly generates a wake-up signal that turns on a data-acquisition microprocessor once the threshold has been detected and thirdly operates as a temperature sensor in a harsh environment while being wired to the microprocessor kept in a safe area. The IC is continuously on for a very long period of time and is required to be powered from a ultrathin battery type, hence must be an ultra low power design. It includes a diode-based temperature sensor, a quasi-temperature independent voltage generator, a comparator and a power switch to limit the microprocessor stand-by consumption. Since our application is mainly for harsh environment (e.g. high temperature, radiation), the chip has been designed using the 1-µm high-temperature SOI-CMOS XFAB technology; it occupies an area of 560µm×165µm. The biasing current and power dissipation are 4.12 µA and 20.6 µW respectively at a supply voltage of 5V and temperature of 27°C, according to the post-layout transistor level simulation results.","PeriodicalId":227302,"journal":{"name":"2010 IEEE International SOI Conference (SOI)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124652094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Compound semiconductors on silicon for future generation VLSI 用于下一代超大规模集成电路的硅基化合物半导体

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641048

R. Hill, A. Baraskar, C. Park, J. Barnett, P. Majhi, R. Jammy

引用次数: 2

Hybrid silicon lasers: Integration of III–V and silicon photonics using wafer bonding 混合硅激光器:利用晶圆键合集成III-V和硅光子学

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641405

R. Jones, H. Park, A. Fang, M. Sysak, B. Koch, D. Liang, H. Chang, J. Bowers

引用次数: 3

Disruptive ultra-low-power SOI CMOS circuits towards μW medical sensor implants 面向μW医用传感器植入的突破性超低功耗SOI CMOS电路

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641370

G. Gosset, D. Bol, G. Pollissard-Quatremex0300re, B. Rue, D. Flandre

引用次数: 3

Total-ionizing-dose radiation response of partially-depleted SOI devices 部分耗尽SOI器件的总电离剂量辐射响应

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641057

N. Rezzak, E. Zhang, M. Alles, peixiong zhao, H. Hughes

引用次数: 14

Total dose radiation response of a 45nm SOI Technology 45nm SOI技术的总剂量辐射响应

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641052

S. T. Liu, A. Hurst, H. Hughes, P. McMarr, J. Benedito, C. Capasso

引用次数: 12