面向μW医用传感器植入的突破性超低功耗SOI CMOS电路

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI:10.1109/SOI.2010.5641370

G. Gosset, D. Bol, G. Pollissard-Quatremex0300re, B. Rue, D. Flandre

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引用次数: 3

摘要

在本文中，我们提出了超低功耗(ULP)医疗传感器植入的破坏性电路设计技术。他们使用独特的CMOS模块来构建ULP二极管和晶体管，这些二极管和晶体管在0.15µm全耗尽SOI CMOS中使用超低vt器件实现，无需修改工艺。利用这些技术，我们提出了一个高效的电源管理单元和一个用于电容传感器的1.1µW接口。

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Disruptive ultra-low-power SOI CMOS circuits towards μW medical sensor implants

In this paper, we propose disruptive circuit design techniques for ultra-low-power (ULP) medical sensor implants. They use unique CMOS blocks to build ULP diodes and transistors that are implemented with ultra-low-Vt devices in 0.15µm fully-depleted SOI CMOS, without process modification. Using these techniques, we propose a highly-efficient power-management unit and a 1.1µW interface for capacitive sensors.

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2010 IEEE International SOI Conference (SOI)

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