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Suppression of DIBL and current-onset voltage variability in intrinsic channel fully depleted SOI MOSFETs 本征沟道全耗尽SOI mosfet中DIBL和电流起始电压变异性的抑制
2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641063
T. Hiramoto, T. Mizutani, Ashok Kumar, A. Nishida, T. Tsunomura, S. Inaba, K. Takeuchi, S. Kamohara, T. Mogami
{"title":"Suppression of DIBL and current-onset voltage variability in intrinsic channel fully depleted SOI MOSFETs","authors":"T. Hiramoto, T. Mizutani, Ashok Kumar, A. Nishida, T. Tsunomura, S. Inaba, K. Takeuchi, S. Kamohara, T. Mogami","doi":"10.1109/SOI.2010.5641063","DOIUrl":"https://doi.org/10.1109/SOI.2010.5641063","url":null,"abstract":"Intrinsic channel SOI MOSFETs were fabricated and their variability were compared with conventional bulk MOSFETs. It is found for the first time that, besides VTH variability, both DIBL variabitlity and current-onset voltage variability are well suppressed in the intrinsic channel SOI MOSFETs thanks to non-intentionally doped channel. Reduction of channel doping is essential to reduce the characteristics variability in scaled FETs.","PeriodicalId":227302,"journal":{"name":"2010 IEEE International SOI Conference (SOI)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116896866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Mobility improvement in nanowire junctionless transistors by uniaxial strain 单轴应变改善纳米线无结晶体管的迁移率
2010 IEEE International SOI Conference (SOI) Pub Date : 2010-07-30 DOI: 10.1109/SOI.2010.5641390
J. Raskin, J. Colinge, I. Ferain, A. Kranti, C. Lee, N. Dehdashti, R. Yan, P. Razavi, R. Yu
{"title":"Mobility improvement in nanowire junctionless transistors by uniaxial strain","authors":"J. Raskin, J. Colinge, I. Ferain, A. Kranti, C. Lee, N. Dehdashti, R. Yan, P. Razavi, R. Yu","doi":"10.1109/SOI.2010.5641390","DOIUrl":"https://doi.org/10.1109/SOI.2010.5641390","url":null,"abstract":"Improvement of current drive in n- and p-type silicon junctionless MOSFETs using strain is demonstrated. The extracted piezoresistance coefficients are in good agreement with the piezoresistive theory and the published coefficients for bulk silicon even for 10 nm-thick silicon nanowires as narrow as 20 nm.","PeriodicalId":227302,"journal":{"name":"2010 IEEE International SOI Conference (SOI)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121735815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 47
Growth of epitaxial silicon-on-insulator substrates by solid state epitaxy 用固态外延法生长外延绝缘体上硅衬底
2010 IEEE International SOI Conference (SOI) Pub Date : 2010-07-08 DOI: 10.1149/1.3487541
F. E. Arkun, S. Semans, G. Vosters, R. Smith, A. Clark
{"title":"Growth of epitaxial silicon-on-insulator substrates by solid state epitaxy","authors":"F. E. Arkun, S. Semans, G. Vosters, R. Smith, A. Clark","doi":"10.1149/1.3487541","DOIUrl":"https://doi.org/10.1149/1.3487541","url":null,"abstract":"Single step growth of crystalline silicon on insulator (c-SOI) substrates based on rare earth oxide (REO) insulator layers are presented. Growth of crystalline REOs on silicon is possible due to their unique lattice matching to twice the lattice spacing of silicon. The single crystal nature of REOs make further silicon overlayer growth with moderate defect densities possible. In this paper we present the growth of Gd<inf>2</inf>O<inf>3</inf> and (Er<inf>x</inf>Nd<inf>1−x</inf>)<inf>2</inf>O<inf>3</inf> on silicon (111) substrates by solid state epitaxy. Silicon overlayers grown by e-beam evaporation on Gd<inf>2</inf>O<inf>3</inf> single crystal films exhibit specular and shiny surfaces conducive for further growth of silicon by chemical routes. Chemical vapor deposition (CVD) growth of silicon on top of the e-beam evaporated template layers were grown at 1150°C. Samples were characterized by AFM, TEM and X-ray diffraction.","PeriodicalId":227302,"journal":{"name":"2010 IEEE International SOI Conference (SOI)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125136001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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