单轴应变改善纳米线无结晶体管的迁移率

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-07-30 DOI:10.1109/SOI.2010.5641390

J. Raskin, J. Colinge, I. Ferain, A. Kranti, C. Lee, N. Dehdashti, R. Yan, P. Razavi, R. Yu

{"title":"单轴应变改善纳米线无结晶体管的迁移率","authors":"J. Raskin, J. Colinge, I. Ferain, A. Kranti, C. Lee, N. Dehdashti, R. Yan, P. Razavi, R. Yu","doi":"10.1109/SOI.2010.5641390","DOIUrl":null,"url":null,"abstract":"Improvement of current drive in n- and p-type silicon junctionless MOSFETs using strain is demonstrated. The extracted piezoresistance coefficients are in good agreement with the piezoresistive theory and the published coefficients for bulk silicon even for 10 nm-thick silicon nanowires as narrow as 20 nm.","PeriodicalId":227302,"journal":{"name":"2010 IEEE International SOI Conference (SOI)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"47","resultStr":"{\"title\":\"Mobility improvement in nanowire junctionless transistors by uniaxial strain\",\"authors\":\"J. Raskin, J. Colinge, I. Ferain, A. Kranti, C. Lee, N. Dehdashti, R. Yan, P. Razavi, R. Yu\",\"doi\":\"10.1109/SOI.2010.5641390\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Improvement of current drive in n- and p-type silicon junctionless MOSFETs using strain is demonstrated. The extracted piezoresistance coefficients are in good agreement with the piezoresistive theory and the published coefficients for bulk silicon even for 10 nm-thick silicon nanowires as narrow as 20 nm.\",\"PeriodicalId\":227302,\"journal\":{\"name\":\"2010 IEEE International SOI Conference (SOI)\",\"volume\":\"125 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"47\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International SOI Conference (SOI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2010.5641390\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2010.5641390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 47

摘要

利用应变改善了n型和p型硅无结mosfet的电流驱动。提取的压阻系数与压阻理论和已发表的体硅的压阻系数基本一致，即使是10 nm厚的硅纳米线也可以窄至20 nm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Mobility improvement in nanowire junctionless transistors by uniaxial strain

Improvement of current drive in n- and p-type silicon junctionless MOSFETs using strain is demonstrated. The extracted piezoresistance coefficients are in good agreement with the piezoresistive theory and the published coefficients for bulk silicon even for 10 nm-thick silicon nanowires as narrow as 20 nm.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 IEEE International SOI Conference (SOI)

自引率

0.00%

发文量