Suppression of DIBL and current-onset voltage variability in intrinsic channel fully depleted SOI MOSFETs

Abstract

Intrinsic channel SOI MOSFETs were fabricated and their variability were compared with conventional bulk MOSFETs. It is found for the first time that, besides VTH variability, both DIBL variabitlity and current-onset voltage variability are well suppressed in the intrinsic channel SOI MOSFETs thanks to non-intentionally doped channel. Reduction of channel doping is essential to reduce the characteristics variability in scaled FETs.