The use of high resolution haze for control of SOI surface roughness in a volume production environment.

Abstract

It is well known that the final surface roughness of SOI wafers has to be controlled to a very tight tolerance in order to maintain transistor parameters required for today's advanced node semiconductor devices. The traditional method for this measurement is to use an atomic force microscope (AFM), but the tool's throughput and the area sampled by each measurement are very limited, and AFM repeatability is low. Such measurements can be used during process development, but are not practical during high-volume production.